Philips BLF278 - Page 5

2003 Sep 19 5
Philips Semiconductors Product Specification
VHF push-pull power MOS transistor BLF278
Fig.4 Temperature coefficient of gate-source
voltage asa function of drain current; typical
values per section.
V
DS
=10V.
handbook, halfpage
0
−5
10
−2
10
−1
MGE623
110
−4
−3
−2
−1
T.C.
(mV/K)
I
D
(A)
Fig.5 Drain current as a function of gate-source
voltage; typical values per section.
V
DS
= 10 V; T
j
=25°C.
handbook, halfpage
0
30
20
10
0
5
I
D
(A)
10
V
GS
(V)
15
MGE622
Fig.6 Drain-source on-state resistance as a
function of junction temperature; typical
values per section.
V
GS
= 10 V; I
D
=5A.
handbook, halfpage
0 50 100 150
400
0
200
100
300
MGE621
R
DSon
(mΩ)
T
j
(°C)
Fig.7 Input and output capacitance as functions
of drain-source voltage; typical values per
section.
V
GS
= 0; f = 1 MHz.
handbook, halfpage
0
1200
800
400
0
20
C
(pF)
40
V
DS
(V)
60
MGE615
C
os
C
is