Philips BLF278 - Electrical Characteristics

2003 Sep 19 4
Philips Semiconductors Product Specification
VHF push-pull power MOS transistor BLF278
CHARACTERISTICS
T
j
=25°C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Per transistor section
V
(BR)DSS
drain-source breakdown voltage V
GS
= 0; I
D
= 100 mA 125 −−V
I
DSS
drain-source leakage current V
GS
= 0; V
DS
=50V −−2.5 mA
I
GSS
gate-source leakage current V
GS
= ±20 V; V
DS
=0 −−1µA
V
GSth
gate-source threshold voltage V
DS
= 10 V; I
D
=50mA 2 − 4.5 V
∆V
GS
gate-source voltage difference
of both sections
V
DS
= 10 V; I
D
=50mA −−100 mV
g
fs
forward transconductance V
DS
= 10 V; I
D
= 5 A 4.5 6.2 − S
g
fs1
/g
fs2
forward transconductance ratio
of both sections
V
DS
= 10 V; I
D
=5A 0.9 − 1.1
R
DSon
drain-source on-state resistance V
GS
= 10 V; I
D
=5A − 0.2 0.3 Ω
I
DSX
drain cut-off current V
GS
= 10 V; V
DS
=10V − 25 − A
C
is
input capacitance V
GS
= 0; V
DS
= 50 V; f = 1 MHz − 480 − pF
C
os
output capacitance V
GS
= 0; V
DS
= 50 V; f = 1 MHz − 190 − pF
C
rs
feedback capacitance V
GS
= 0; V
DS
= 50 V; f = 1 MHz − 14 − pF
C
d-f
drain-flange capacitance − 5.4 − pF
V
GS
group indicator
GROUP
LIMITS
(V)
GROUP
LIMITS
(V)
MIN. MAX. MIN. MAX.
A 2.0 2.1 O 3.3 3.4
B 2.1 2.2 P 3.4 3.5
C 2.2 2.3 Q 3.5 3.6
D 2.3 2.4 R 3.6 3.7
E 2.4 2.5 S 3.7 3.8
F 2.5 2.6 T 3.8 3.9
G 2.6 2.7 U 3.9 4.0
H 2.7 2.8 V 4.0 4.1
J 2.8 2.9 W 4.1 4.2
K 2.9 3.0 X 4.2 4.3
L 3.0 3.1 Y 4.3 4.4
M 3.1 3.2 Z 4.4 4.5
N 3.2 3.3