Samsung CS29Z40ZQTXNWT - Chapter 13 Circuit Description; 13-1 Circuit Key Point

Circuit Description
Samsung Electronics 13-1
13. Circuit Description
13-1 Circuit Key Point
13-1-1 Pin configuration of “Face-down” QIP versions
13-1-2 UOC3(TDA120XX) Pin Description
1
1
1
0
0
0
1
laitinI
laitinI
)uneM ,nwoD emuloV ,pU emuloV ,nwoD lennahC ,pu lennahC(1 yeK lenaP-niarD nepO3.3P1yeKlenaPp
51
t
r
o
P
po
t
S s
u
B
-
nia
rD
n
e
pO2.3PpotSsu
Bp
41
DI 2trac
S-
y
aR-X kcaJ ACR-
niarD n
e
pO1.3P2tracSp
31
DI
1t
ra
cS-
-noi
tpO ACR(W/S retliF waS dnuoSM : dnuoS ,woL)hgi
H
niarD nepO0.3P1tracSp
21
nO etuM dnuoS : hgiH
-
ffO
e
tuM dnuoS
:
w
oL-
lluP h
s
uP1.2Pe
t
uMdnuoSp
11
nocomeR ,edoMyBdnatS(deL-lluP hsu
P
0.
2
PDELp
01
ataD suB C2I-lluP h
s
uP7.
1P
A
D
S
p
8
kcolC suB C2I-lluP hsuP6.1PLCSp
7
3.1
P
1
.1P
0.1P
5.0P
0.
0P
retsigeR
retsigeR
lluP hsuP
lluP hsuP
lluP hsuP
niarD nepO
lluP hs
u
P
epyT troP
epyT troP
nO rewoP : hgiH-
ffO rewoP : woL-
rewoPp
6
)woL : 85.3CSTN ,hgiH : LAP(W/S LAP/CSTN-
-WC
retliFwaSp
5
lioC g
nissua
geD-liocDp
4
RInoc
o
meR-RIp
2
tliT-tliTp
15
(
(
mociM
mociM
)46 ~ 45 ,11 ~ 1 niP
)46 ~ 45 ,11 ~ 1 niP
emaN
emaN
niP
niP
oN
oN
1
1
1
0
0
0
1
laitinI
laitinI
-
)
retsigeR
retsigeR
epyT troP
epyT troP
-)woL : L ,hgiH : 'L(W/S waS dnuoS 'LL/
(
(
noitpircseD
noitpircseD
noitpircseD
notpircseD
mociM
mociM
)46 ~ 45 ,11 ~ 1 niP
)46 ~ 45 ,11 ~ 1 niP
emaN
emaN
niP
niP
oN
oN
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