Samsung PS42C7HX/XEC - 10-1-11 FRC Memory

Samsung Electronics
Schematic Diagram
10-9
) CRF ROF ( XR SDVLyromeM CRF
NOIT
P
O
E
T
E
L
ED
N
OI
T
P
O
ET
E
LE
D
02
6
PT
1
096
R
mho
7
4
8
3
1
6AR
74
12
3
4
56
7
8060C
12
3
4
5
6
7
8
Fn001
7
8
216AR
74
74
11
6
AR
12
34
56
m
ho7
4
1
9
6
R
F
E
RX
4
96Rmho
7
4
6
86R
3
8
6
R
m
h
oK01
12
34
56
78
m
ho
7
4
7
4
6
1
6AR
2
8
6R
m
h
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5
8
6
C
F
n1
V
3
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Fn001
368C
F
E
RX
4
0
7C
F
n
1
mho
7
4396R
mhoK001
0
86R
W
01
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m
h
o745
8
6R
F
p51
FERX
V3.3+
4
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227C
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A
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6
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5.
1
10
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F
u
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61
2
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1
1
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6
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226
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1
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Fu
0
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1
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7
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5
16
AR
V05
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7
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h
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Fn001
18
6
R
Fn001
168C
V3.3
+
H
u
5.1
91
6
L
61
RE-
RE+
62 63
PGND
PVCC
64
7
5
ER
4ER
8
9
C
C
V
RC-
54 55
RC+
RCLK-
56 57
RCLK+
LGND
58
RD-
59
6
E
R
6
60
RD+
74
0AR
CCV
84
RA-
49
5
F/
R
50
RA+
51
RB-
RB+
52
LVCC
53
E
O
4
6AR
04
14
5AR
4AR
2
4
3
4
3AR
44
DN
G
54
2AR
64
1
A
R
32
RB6
5BR
3
3
43
4
B
R
53
3BR
2BR
63
CCV
7
3
1BR
83
0BR
93
RC4
25 26
RC3 RC2
27 28
RC1 RC0
29
DP
3
30
GND
31
CLKOUT
18
RD3 RD2
19
T
SET
2
20
RD1 RD0
21 22
RC6 VCC
23 24
RC5
01
3ER
2ER
1
1
1ER
2
1
3
1
0ER
6DR
41
5
1
5DR
61
DNG
17
RD4
A
40
1D
VL
3
6CHT
416CI
DN
G
1
mho22
0
68R
F
E
RX
FERX
FERX
7
1
_E
W
V
6
1
Fu00
1
9
1
8C
2S
S
V
85
3S
S
V
27
6
8
4SSV
1
Q
SSV
6
2
1
2
Q
SSV
2
3
3
QSSV
4
QSS
V
8
3
64
5
QS
S
V
6
Q
S
S
V
2
5
87
7QS
S
V
48
8
Q
S
S
V
3DDV
4D
DV
3
4
1
QDD
V
3
2
Q
DDV
9
5
3
3
Q
DDV
4
QDD
V
14
9
4
5QDDV
6
QDDV
5
5
7QDD
V
5
7
1
8
8QDD
V
4
4
1S
S
V
41
1
C_N
2
C
_N
12
0
3
3C
_N
4C
_N
7
5
5
C
_N
9
6
6C
_
N
0
7
7C_
N
37
_
S
AR
9
1
1D
DV
1
51
2DD
V
92
1
3
QD
6
5
4QD
8
0
1
5
QD
1
1
6
Q
D
3
1
7
QD
8
QD
4
7
9
QD
6
7
1
M
QD
17
82
2
MQD3
M
QD
95
61
O
MQD
93
22QD
04
3
2
Q
D
2454
42QD
74
52QD
8
4
62
Q
D
0
5
7
2
Q
D
82QD
15
92QD
35
3QD
7
0
3
Q
D
4
5
0
8
2
1
Q
D
2
8
3
1
QD
38
41QD
58
51
QD
1
3
6
1
Q
D
33
71
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4
3
8
1
QD
6
3
9
1
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2Q
D
5
0
2
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7
3
12Q
D
66
9
A
0
A
B
2
2
1AB
3
2
8
1
_
S
AC
76
EKC
8
6
KL
C
_
SC
02
0Q
D
2
1
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4
01
QD
7
7
9
7
1
1Q
D
0
A
5
2
1
A
62
01
A
4
2
2
A
72
0
6
3
A
1
6
4A
2
6
5A
3
6
6A
4
6
7
A
5
6
8
A
6
78
C
R
F
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V3
.
3
+
0
6
C
T
-E2
32
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4
1
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R
12
3
4
5
91
6
PT
1
FERX
74
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7
4
V61
V3.3+
F
n
0
01
8
7
6C
F
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0
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Fu0
1
V61
7
7
6
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)
0(N
IR_
EIND
)1
(N
IR
_
EI
N
D
)
0(
NI
G
_
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)
1
(N
I
G
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EIN
D
)0(NI
B
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IND
)1
(
NIB
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E
I
ND
)11:0(E_VL
F
n
1
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)9
(NI
R_
EIND
)
8(NI
R_
EIND
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(
NI
R_EIND
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(
NI
R
_
E
IN
D
)9:0(NIG_EIND
)5
(
NI
G
_E
IND
)
4
(N
I
G
_
E
I
ND
)
3(
N
I
G
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D
)
2
(
N
IG_EIN
D
)
9
(
NI
G
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EIN
D
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)
7
(NIG_EIND
)6
(
NI
G
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)
5
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E
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N
D
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(
NI
B
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D
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EI
N
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2
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B_EIND
)
9
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D
)
8(
NI
B
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EIND
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(NIB_
E
I
N
D
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E
IND
)0
(E
_V
L
)
1
(E_V
L
)
2(E_V
L
)
3(
E_
V
L
)4
(
E
_
VL
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(
E
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V
L
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(E_
V
L
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E
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8(
E_
V
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9
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E_
VL
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0
1
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VL
)
11(E
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VL
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T
U
OSV
X
E_TU
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S
H
NEP
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(N
IR_EIND
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5
(
NIR
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I
N
D
)4(NI
R
_EIN
D
)3
(NI
R
_
EIN
D
)2
(NI
R
_EIN
D
K
L
C
_
MA
R
DS
)11
:0
(RDD
A_
M
ARD
S
1
K
NA
B
_M
A
R
D
S
0KNAB_MARDS
S
ACn_MARDS
MQD_MARDS
M
Q
D
_MARDS
S
A
R
n
_M
A
RDS
EW
n
_M
A
RDS
)13:0(QD
_
MARDS
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10-1-11 FRC Memory