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Samsung R528 - Page 210

Samsung R528
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8-99
R530/R730
8. Block Diagram and Schematic
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
- This Document can not be used without Samsung's authorization -
Samsung
Confidential
Samsung
Confidential
Samsung
Confidential
4
OCP : (10uA * R878) / Rds(on)
350KHz
PART NO.
EXCEPT AS AUTHORIZED BY SAMSUNG.
A
DDR2 VTT(0.9V)
Nichicon New($0.09)
AP4232BGM NEW
C
FOR EMI
1
SAMSUNG
REV
OCP : Max 3A (25C)
OCP : Min 1.6A (125C)
SET : 1.802V
SAMSUNG ELECTRONICS CO’S PROPERTY.
OCP : 7.69A@26mohm
DEV. STEP
D
APPROVAL
PROPRIETARY INFORMATION THAT IS
LAST EDIT
(4A)
1
MODULE CODE
B
October 05, 2009 20:00:56 PM
1.0
ADV2nd
9/23/2008
undefined
SJ.Park
HJ.Kim
TW.Kim
3
CHECK
SAMSUNG PROPRIETARY
C
2
DATE
PAGE
DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS
DRAW
ELECTRONICS
THIS DOCUMENT CONTAINS CONFIDENTIAL
D
B
RdsOn : 32mohmMAX
OF
DDR2 Power
Misan,Maglayer
2
Vout = 0.75 * (1 + (Rtop / Rbot))
TITLE
A
4 3
OCP : 6.25A@32mohm
D:/users/mobile29/mentor/Bremen-UL/Bremen-UL_Etc
DDR2 POWER
PWR_MEMORY
Bremen-UL
5043
BA41-xxxxxA
6.3V
1000nF-X5R
C231
100nF
C217
25V
20K
R193
1%
0505-002581
AP4232BGM-HF
Q25-1
7.6V
D1
7 8
D2
2
G
1
S
G_DDR
4700nF-X5R
C226
25V
10K
R774
1%
P5.0V_STB
3
S
25V
C236
10nF
0505-002581
AP4232BGM-HF
Q25-2
7.6V
D1
5 6
D2
4
G
1%
R195
100K
1%
0.1nF
50V
P1.8V_AUX
100K
R194
nostuff
C235
50V
1nF
C227
G_DDR
SHORT506
R1608-SHORT
R190
10
1%
17.4K
R200
1%
12.4K
R199
1%
R799
100K
1%
P5.0V_STB
nostuff
100nF
C218
10V
nostuff
1
3
75V
D16
MMBD4148
VOUT
3
VREF
6.3V
10000nF-X5R
C229
2
GND
5
NC_1
7
NC_2
8
NC_3
PAD
9
6
VCNTL
1
VIN
4
7V
1203-006083
APL5336KAITRG
U14
1%
R201
200K
G_DDR
1000nF-X5R
C831
6.3V
nostuff
10V
100nF
C230
50V
C215
1nF
1%
10
R189
R800
10
12
POK
6
PVCC
10
THERMAL
15
TON
2
UGATE
13
VCC
4
VOUT
3
BOOT
14
EN
1
FB
5
GND
7
LGATE
9
OCSET
11
PGND
8
PHASE
1203-006049
APW7141QAITRG
U15
5V
P5.0V_AUX
1%
R191
100K
R196
10K
60V
3
D
G
1
S
2
1%
Q28
RHU002N06
G_DDR
G_DDR
25V
4700nF-X5R
C216
2703-001012
MS-RH1048S-L42
L10
2.2uH
VDC
G_DDR
60V
3
D
G
1
S
2
Q26
RHU002N06
25V
C220
10nF
R203
2.2
100nF
C228
EC16
25V
2409-001176
2.5V
330uF
EC17
15mohm
CAN 6T
2402-001144
AL
25V
68uF
P5.0V_AUX
1%
P5.0V_STB
P1.8V_AUX
G_DDR
10K
R202
C232
10000nF-X5R
6.3V
1%
R773
10K
DDR3VR_KBC3_PWRON_P0.75V_RCQ_MN
ANS_DDR3VR_BG_MN
MEM1_VREF
P0.9V
P1.8V_AUX
PNS_DDR3VR_BST_RC_MN
PNS_DDR3VR_PHASE_RC_MN
KBC3_SUSPWR
DDR3VR_VCC_MN
DDR3VR_PGOOD_MN
PNS_DDR3VR_BST_MN
PNS_DDR3VR_PHASE_MN
DDR3VR_TON_MN
PNS_DDR3VR_TG_MN
DDR3VR_TRIP_MN
DDR3VR_VREF_P0.7V_MN
DDR3VR_P5.0V_ALW_VREF_RQ_MN
KBC3_PWRON
DDR3VR_VFB_MN
DDR3VR_EN_PSV_MN

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