Samsung SENS R60 Plus - Page 64

Samsung
Confidential
C
C
D
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SAMSUNG
ELECTRONICS
DDR2 Power
SAMSUNG PROPRIETARY
THIS DOCUMENT CONTAINS CONFIDENTIAL
PROPRIETARY INFORMATION THAT IS
SAMSUNG ELECTRONICS CO’S PROPERTY.
DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS
EXCEPT AS AUTHORIZED BY SAMSUNG.
PART NO.
A
A
B
B
4
10nF
C130
VDC
25V
10000nF
C887
1K
470K
nostuff
1%
R550
nostuff
R63
54-B3
19-C2
19-D4
20-A4
54-C4
0
R859
715K
1%
R75
40-C3
R76
1%
12.1
G_DDR
1nF
nostuff
R64
1%
12.1
nostuff
C68
1.8uH
SIQ1045-1R8PF
L505
1nF
C67
C886
10000nF
25V
R80
150K
1%
nostuff
0
R81
G_DDR
1%
100K
R82
0
SHORT7
6.3V 6.3V
C70
10000nF
G_DDR
P3.3V
10000nF
C65
C559
100nF
25V
R77
1%
300K
1%
12.1
R62
1%
R552
1%12.1
R78
20K
C589
G_DDR
P5.0V_AUX
1nF
C873
2.2nF
4.7
R862
MICOM_P3.3V
P1.8V_AUX
G_DDR
1%
G_DDR
C66
1000nF
G_DDR
1K
R548
VDC
AL
EC3
330uF
2.5V
PGND_1
18
PGND_2
17
16
PGND_3
8
REF
25
THERM
TON
2
5
VCCA
VDDP
20
VDDQS
3
4
VSSA
VTTEN
11
13
VTTIN_1
12
VTTIN_2
VTTS
10
VTT_1
15
VTT_2
14
SC486IMLTRT
BST
249
COMP
23
DH
19
DL
1
EN_PSV
FB
6
ILIM
21
22
LX
PGD
7
G_DDR
P5.0V
P0.9V
U6
BAT54
D5
13
40-C345-B152-D454-D3
P1.8V_AUX
1%
R79
150K
C558
C125
1nF
25V
100nF
2.5V
330uF
EC5
nostuff
AL
nostuff
R85
0
0
R86
5
D1 D2
67
D3 D4
8
4
G
S1
1
S2
23
S3
6
D2 D3
78
D4
G
4
S1
12
S2 S3
3
Q10
AP6680AGM
AP6680AGM
Q507
D1
5
25V
C587
100nF
P5.0V_AUX
P5.0V_ALW
C588
1000nF
1nF
C127
10K
R84
G
2
S
RHU002N06
Q19
D
3
1
G
2
S
3
D
G
1
S
2
RHU002N06
Q20
D
3
1
Q18
RHU002N06
R83
0
R61
3.3
P1.8V_AUX
C69
1000nF
C126
1000nF
BAT54C
12
3
C590
1000nF
INSTPAR
SHORT527
MEM1_REF
nostuff
D4
1%
P5.0V_AUX
G_DDR
G_DDR
KBC3_SUSPWRON
KBC3_1.8V_EN#
CHP3_ALINK_RST#
P1.2V_PWRGD
AUX_PG
G_DDR
R549
10K