Samsung SENS R60 Plus - Page 68

Samsung
Confidential
B
C
SAMSUNG
D
D
P1.2V_NB / P2.5V POWER
(MAX : 2A)
ELECTRONICS
P1.8V_GFX POWER
Place near GFX chip.
4
4
3
3
PROPRIETARY INFORMATION THAT IS
SAMSUNG ELECTRONICS CO’S PROPERTY.
( MAX : 1A)
EXCEPT AS AUTHORIZED BY SAMSUNG.
2
2
1
COM-22C-015(1996.6.5) REV. 3
SAMSUNG PROPRIETARY
THIS DOCUMENT CONTAINS CONFIDENTIAL
DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS
A
P1.5V POWER
NOSTUFF
C
A
B
100nF
C593
10V
50V
1nF
C594
6.3V
C865
10000nF
4700nF
C592
6.3V
U508
MIC5219B
ADJ
4
EN
3
2
GND
1
IN
5
OUT
nostuff
10
R557
1%
R583
10K
P5.0V_AUX
30.1K
1%
1K
R95
EC6
100uF
6.3V
AD
1%
R580
1 2
D2
5
D3 D4
63
G S
4
SI3456BDV-T1-E3
Q17
D1
D1
56
D2
7
D3 D4
8
4
G
S1
12
S2 S3
3
TP19300
AP6680AGM
Q21
C606
nostuff
10V
100nF
nostuff
30K
R571
1
3
2
nostuff
10K
R570
nostuff
Q513
MMBT3904
nostuff
100K
R568
100nF
C150
0
R581
1%
P1.8V_AUX
nostuff
10K
R563
100nF
C604
10nF
C128
P1.8V_AUX
P1.8V_GFX
3
D
G
1
S
2
0
R567
nostuff
Q515
SI2315BDS-T1
40-C4 50-B4 54-B3
R556
200K
1%
P1.5V
R555
43.2K
1%
1000nF
P3.3V_AUX
EC4
C612
AL
2.5V
330uF
100K
1%
R57
C62
10nF
10K
R582
1%
nostuff
P5.0V
C605
2.2nF
nostuff
4700nF
C152
6.3V
40.2K
1%
R562
6.3V
C129
4700nF
C603
25V
4.7nF
U510
SC338IMSTR
ADJ1
2
ADJ2
8
1
DRV1
9
DRV2
3
EN1
EN2
7
5
GND
IN
10
PGD1
4
6
PGD2
R579
1%
43.2K
P2.5V
1%
P5.0V
P1.5V
1%
11K
R873
7.5K
R872
1.5K
R564
1%
P3.3V_AUX
P12.0V_ALW
P3.3V
10000nF
EC506
6.3V
C881
10000nF
6.3V
C880
4700nF
C883
1000nF
MIC49150YMM
U535
1
EN_ADJ
GND1
5
6
GND2
7
GND3
GND4
8
VBIAS
2
VIN
3
4
VOUT
G
4
S1
12
S2 S3
3
P1.8V_AUX
AP6680AGM
Q13
D1 56
D2 D3
78
D4
3.3nF
C151
1%
1K
R561
P1.2V_PEG
10nF
C613
nostuff
KBC3_PWRON
KBC3_VRON
GCORE3_PWRGD
P2.5V_PWRGD