Thytronic XMR-V 4V - Page 279

FUNCTION CHARACTERISTICS
279
Ground directional overcurrent (67N) - Fourth element logic diagram (IED>>>>) - Projecting operating mode (sheet 2 of 4)
67NS4-proiezione.ai
I
E2
I
E2
3V
o
I
E2
&
&
I
EDCLP>>>>def
sheet 3
P
A
&
State
I
E
∙cosϕ ≥ I
EDCLP>>>>def
I
E
∙cosϕ ≥ 0
I
ED>>>>def
Angle Semisector
I
E
∙cosϕ ≥ I
ED>>>>def
OFF
ON
Insens-Zone
Φ
E
inside trip sector
I
E2
Φ
E
inside trip sector
≥1
A = ON - Change setting within CLP
A =“ON”A =“OFF”
A = ON - Change setting within CLP
A =“ON”A =“OFF”
3V
o
I
E2
I
E2
∙cosϕ ≥ 0
&
&
3V
o
I
E2
TRIP
3V
o
I
E2
TRIP
A = ON - Change setting within CLP
A =“ON”
CLP
A =“OFF”
I
E2
Common configurations
Insens-Zone
OFF
ON
U
E
U
EC
3Votype67N
3V
o
I
I∙cos
Mode67N
≥ M∙threshold
M
Insens-Zone OFF
Insens-Zone ON
3V
o
&
State
U
ED>>>>def
≥ M∙U
ED>>>>def
3V
o
&
State
U
ED>>>>def
≥ U
ED>>>>def
3V
o
&
State
U
ED>>>>def
≥ U
ED>>>>def
I
E
∙cosϕ ≥ M∙I
ED>>>>def
I
E2
I
EDCLP>>>>def
A
&
State
I
E
∙cosϕ ≥ M∙I
EDCLP>>>>def
I
ED>>>>def
I
E2
∙cosϕ ≥ I
ED>>>>def
I
E2
I
EDCLP>>>>def
A
&
State
I
E2
∙cosϕ ≥ I
EDCLP>>>>def
I
ED>>>>def
soglia I
ED
I
E
Φ
E
o Φ
EC
Angolo caratteristico
U
E
U
EC
Settore intervento
(direzione linea)
Settore non intervento
(direzione sbarre)
Semiasse caratteristico
Semiampiezza settore
angolare d’intervento
XMR-D EQUIPMENT MANUAL
Ed. 2.9 - 02/2021