11 Reliability
11.27 HCI 3devices: Hot Carrier Injection test, 4 terminals, 3 devices (A.01.20)
[Supported Analyzer]
B1500A
[Description]
Performs the hot carrier injection test, and plots the accumulated stress time vs threshold voltage/drain current
characteristics. Maximum three devices can be measured by a test execution. This test is performed as follows.
1. performs initial characterization
2. applies stress voltage
3. performs interim characterization
4. saves measurement data
5. repeats 2 to 4 until TotalStressTime elapses
[Device Under Test]
MOSFET, 4 terminals, 3 devices
[Required Accessories]
Agilent B2200A or B2201A switching matrix 1 unit
GPIB cable
Connect B2200A/B2201A to B1500A with a measuring cable and GPIB cable.
Set information on B1500A SMU channel's connection to the B2200A/B2201A input port properly on the
Switching Matrix tab screen of the Configuration window.
Set the output channel number of B2200A/B2201A connected to each terminal of a device under test properly
in the Tr#Gate/Tr#Drain/Tr#Source/Tr#Subs field (# is an integer from 1 to 3) of Test Parameters area.
[Device Parameters]
Polarity: Nch (SMUs force the specified value) or Pch (SMUs force the negative specified value)
Lg: Gate length
Wg: Gate width
Temp: Temperature (deg C)
[Test Parameters]
IntegTime: Integration time (SHORT, MEDIUM, LONG)
Tr#Gate: SWM Pin Assign settings for Gate terminal of devices
Tr#Drain: SWM Pin Assign settings for Drain terminal of devices
Tr#Source: SWM Pin Assign settings for Source terminal of devices
Tr#Subs: SWM Pin Assign settings for Substrate terminal of devices
where, # is an integer from 1 to 3.
[Test Parameters for Sampling_Stress]
TotalStrsTime: Total stress time
Tr#StrsGate: SMU connected to Gate terminal of devices, constant voltage output
Tr#StrsDrain: SMU connected to Drain terminal of devices, constant voltage output
StrsSource: SMU connected to Source terminal of devices, constant voltage output
StrsSubs: SMU connected to Substrate terminal of devices, constant voltage output
Tr#VgStrs: Gate terminal stress voltage for the devices
Tr#VdStrs: Drain terminal stress voltage for the devices
VsubsStrs: Substrate terminal stress voltage for the devices
VsStrs: Source terminal stress voltage for the devices
where, # is an integer from 1 to 3.
Agilent EasyEXPERT Application Library Reference, Edition 8
11-62
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