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General information and scope of the manual for the TFS 200 system.
Procedures for system startup, shutdown, and handling emergency stops.
Concise instructions for manual operations using the HMI interface.
Methods for delivering precursors, including own vapor pressure and carrier gas assisted.
Procedures for loading and unloading various types of precursor sources.
Overview of source types (gas, liquid, hot) and adjustments.
Overview of the TFS 200 flow system, including safety notes.
Explanation of symbols used in PI diagrams and component coding.
Recommended starting values for orifices and needle valves.
Fundamental principles and tests for optimizing ALD processes.
Description of the heating and cooling system and their adjustment.
Summary of residual mechanical, thermal, and material risks and safety measures.
| Technology | Atomic Layer Deposition (ALD) |
|---|---|
| Substrate Size | Up to 200 mm |
| Precursors | Liquid and solid precursors |
| Deposition Area | Up to 200 mm wafers |
| Base Pressure | < 10-6 mbar |
| Operating Pressure | 1-10 mbar |
| Power Supply | Standard laboratory power supply |
| Control System | PC-based control with software |