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PowerEdge R515 Technical Guide
6 Memory
6.1 Overview
The PowerEdge R515 uses DDR3 memory providing a high-performance, high-speed memory interface
capable of low latency response and high throughput.
Key features of the R515 memory system include the following:
ď‚· Support for up to 256 GB of memory (with eight 32GB RDIMMS)
ď‚· Two channels per processor
ď‚· Registered ECC DDR3 DIMMs or Unbuffered ECC DDDR3 DIMMs
ď‚· DDR3 speeds of 1066/1333/1600MT/s
ď‚· Single rank, dual rank, and quad rank DIMMs
ď‚· Single bit error correction
ď‚· Advanced ECC (Chipkill)
ď‚· Online spare
ď‚· Parity
ď‚· Low voltage (LV) DIMM support (4-core 4100 series processor runs at 1.5V)
6.2 DIMMs Supported
The PowerEdge R515 supports DDR3 RDIMMs and UDIMMs. The memory interface uses 1 GB, 2 GB, 4 GB, 8 GB,
16GB and 32 GB RDIMMs and 1 GB, 2 GB, and 4 GB UDIMMs. See Table 11.
Table 11. DIMMS Supported
1GB, DDR3, 1333MT/s, single rank
2GB, DDR3, 1333MT/s, single rank
2GB, DDR3, 1333MT/s, single rank
4GB, DDR3, 1333MT/s, dual rank
4GB, DDR3, 1333MT/s, dual rank
8GB, DDR3, 1333MT/s, dual rank
1GB, DDR3, 1333MT/s, single rank, LV
2GB, DDR3, 1333MT/s, single rank, LV
2GB, DDR3, 1333MT/s, single rank, LV
4GB, DDR3, 1333MT/s, dual rank, LV
4GB, DDR3, 1333MT/s, dual rank, LV
8GB, DDR3, 1333MT/s, dual rank, LV
2GB, DDR3, 1600MT/s, single rank, LV
16GB, DDR3, 1066MT/s, quad rank, LV
4GB, DDR3, 1600MT/s, dual rank, LV
4GB, DDR3, 1600MT/s, dual rank
8GB, DDR3, 1600MT/s, dual rank
16GB, DDR3, 1333MT/s, dual rank
32GB, DDR3, 1333MT/s, quad rank
2GB, DDR3, 1600MT/s, single rank
4GB, DDR3, 1600MT/s, dual rank
8GB, DDR3, 1600MT/s, dual rank
16GB, DDR3, 1600MT/s, dual rank
16GB, DDR3, 1333MT/s, dual rank