6
Revision 1.9
256M Double Data Rate Synchronous DRAM
A3S56D30ETP
A3S56D40ETP
BLOCK DIAGRAM
/CS /RAS /CAS /WE UDM,
LDM
Memory
Array
Bank #0
DQ0 - 15
I/O Buffer
Memory
Array
Bank #1
Memory
Array
Bank #2
Memory
Array
Bank #3
Mode Register
Control Circuitry
Address Buffer
A0-12
BA0,1
Clock Buffer
CLK CKE
Control Signal Buffer
DQS Buffer
UDQS, LDQS
DLL
/CLK
A3S56D40ETP
Type Designation Code
This rule is applied to only Synchronous DRAM family.
Zentel DRAM
Speed Grade
Package Type TP: TSOP(II)
Process Generation
Function Reserved for Future Use
Organization 2
n
4: x16
DDR Synchronous DRAM
Density 56: 256M bits
Interface S:SSTL_3, _2
Memory Style (DRAM)
A 3 S 56 D 4 0 E TP –G5
6: 166MHz @CL=3.0/2.5, and 133MHz @CL=2.0
5: 200MHz @CL=3.0, 166MHz @CL=2.5, and 133MHz @CL=2.0
5E: 200MHz @CL=3.0/2.5, and 133MHz @CL=2.0
AVR3600 harman/kardon