Hitachi AP1 - Page 232

HMCS404C----------------------------------------------------------------
<
E
2.0
1.6
'r:; 1.2
j
j 0.8
0.4
o
500
Ta=-20-+75"C
ISBY:
Vcc=5V
/max.
I
V
V ISBY2
max.
~
V
~
V
'"
2
3 4
fosdMHz)
ISBY vs. fose Characteristics
(Resistor
Oscillator Option)
5
1 _I 1 I
Ta=-20-+75"C
400
< 300
~
T 200
100
o
15
~10
«
E
C
·e
oJ
.2
5
o
./
max .
~
V
V
V
V
10--
I--
I--
I--
I--
typo
min.
2
3
4
5
6
VcdV)
-I p (Pull·up MOS Current) vs.
Vee Characteristics
Ta=-20-+75"C
/"
/
/
/
/V
/ V
//
//
I,....--
//
V
#
V
//
..IV
,
[7
2 3
VOL(V)
IOL min. vs. VOL Characteristics
(Standard Pin)
Vcc=6V
Vcc=5V
Vcc=4V
230
2.0
1.6
0.4
o
500
400
Ta=-20-+75"C
fosc=4MHz
2
3
VcdV)
v:
V
ISBY1
x.
lAma
ISBY2
vax.
4
5
6
ISBY vs. Vee Characteristics
(Resistor Oscillator Option)
Ta=-20 - +75°C
1
max.
I--
I--
....-
./
I
II
J
I
~ 300
c(
~
200
100
o
I
V
I
V
L
'LV
r/
.L
10
20 30
40
Vcc-Vdisp(V)
Id (Pull·down MOS Current) vs.
(Vee - VdisP) Characteristics
4
Ta=-20-+75"C
<
tyP.,
min.
50
5 3t---t---+---+--t---::~~
C
.~ 2~--~--~----~~~~
.E
1
2
VCC-VOH(V)
3
-IOH min vs. (Vee - VOH) Characteristics
(Standard Pin
"CMOS")