HP 5383A

M o d
el 5383 Α
R
eplaceable Pa
r ts
A BBREV IATIO N
S
IIS R
= double sideband
MFR
=
manufacturer
P I
V
= pea
k i
nverse voltage TFT = t h i n -fil m transistor
Ι ) ΤΙ .
= diode tra n sisto r logic mg = milligram
pk = pea k TG1 . = toggle
D VM
=
digital voltmeter ΜΗτ = m ega h
ert
z
I'll
=
ph ase lock THD
=
thread
Ε
('1,
= e m itter coupled logic m H = m illi henry
PLO
=
ph ase lock oscillator
THRIT
_
through
Ν : Μ F -
= electromotive force Mho
=
Mho PM = p
h
ase modulation TI = tita n i um
ΕπΡ = electronic
d
ata ΜΙΝ
=
m ini mum
ΡΝΡ = positive-negative- TOT, = tolerance
processing min = m in u te (ti m e)
positive
TR I M
=
trimmer
ELECT
= electrolytic
= m in
u
te
(plane
a n
gle)
Ρ ' Π = part of TSTR = transistor
ΕΝΓΛΡ = encapsulated ΜΙΝΛΤ = m i n iatu r e
ΡΠ
l .
Υ
=
polystyrene TTI . "
transistor-transistor
ΕΧΤ
= exte rn al Mot = m illi m eter PORC porcelain logic
F
= farad Mot) = modulator
ΡΠ S = positive : positio n (s) T V " television
FF T
= fiel d -effect
tran-
mom = m ome n tary (used in parts list) TVi = television inter
f erence
sistor ΜΠ
S
= metal-oxide semi-
ΡΛ
S
Ν =
position TWT
_ traveling wave t u be
F' F
= flip-flop conductor POT = potentiometer
11
= m
icro
(10
-6
) (use
d
F H = flat head MR
= m illiseco nd Ρ - ρ = peak-to-peak in parts list)
Fit . Η
= filliste r h ea d ΜΤ G = m ou nting PP = peak
-to-pea
k (use
d
[1 F = microfarad (used in
F M = fre q u ency modula-
M T
R
= m eter
(i
n d icating i n parts list) parts list)
tion device)
PPM = pulse-position
JTHF
= u ltra
h
ig h fre qu e n cy
FP
= fro n t panel MV = m illivnlt modulation ITNREG " unregulated
FRF Q
=
freq u en cy
m vac = m illivnlt,
ac
PRBA M P I . = preamplifier V
=
volt
FΧπ
= fixe d mV d ι = m illivnlt, do P RF = pulse-repetition VA
=
volta m p e τ e
Κ
= gra m mV pk = m illivnlt, pea k f τeq u e n ev V sc " volts, ac
( : Ν : = ger ma n i u m mV
ΡΡ
= m illivolt pea k -to- PRR = pulse repetition rate
V
AR " variable
G
Η 7
=
g ι ga h ertz peak
ρs
= pic ιι seco nd V ΓΠ " voltage-controlled
(" Ι . = glass mV r m s = m illivolt, rms Ι
'1' =
point oscillator
CND
=
g r nu nd le λ )
raw
= m ill ί watt ΡΤΜ = pu lse-ti m e m n du la- Vd c = volts . d o
Ι 1
=
hen r v Μί 1 Χ
=
m ultiplex
τίπη V ΠΓ W " volts, dc, working
h = hour ΜΥ = m νΙατ P W M = ρυ
l
αΡ
-
width (used in parts list)
ΗΕΤ
= h etero d vn Ρ
μΛ = m icroa m
pere modulation V(F) " volts, filtered
HEX
= hexagonal μ F = m i ι rofa ra d
PWV = pea k working voltage
VFO
"
variable-frequency
Η 11 = head μΗ = m icro h en τ v
R(' = resista n ce oscillator
H I1W = hardware μ mh Π = m ic τ n mh o
capacitance V
HF
=
ve ry- h ig h fre q uency
H F = h ig h freq
uency
μΡ = m icroseco nd
RFΓ T = rectifier
VPk
= volt . . pea k
HG = m erc urv WV
=
m i ι rovolt REF
= refere n ce
VP
- ρ =
volts . pea k
-to-pea k
ΗΙ
=
high
μνα c = m icro ν nlt,
ac
RFG = regu late d Vr n ι s = volts, r m s
ΗΡ = Hewlett- P ac k ar d μ V λc = m icr ιι volt, do
R
FP I . =
replaceable V S W
R
= voltage sta nd ing
HP F
= h ig h pass filter μ V p k = m ί c τιινπ 1t, pea k RF = radio fre q uency wave ratio
H R " hour (used in parts
μ V Ρ - Ρ
= m ic τ nvnlt, peak -to-
R
F
I =
radio
fre
qu
ency V ΤΛ " voltage-tuned
list) pea k inter f ere nce oscillator
HV = h igh voltage μ V r m
s
= m ic τιι volt, r m α
RH = round h ead ; right VTVM " vacuum-tube
Η
7, = Hertz
ι +W
= m i ι rowatt ha nd voltmeter
1 Γ
=
integrated
circ u it
πΑ = παηπα
m
ρ ere
R Ι . Γ = resista n ce- V( Χ ) " volts . switched
11) " inside diameter NC " no connection i ndu cta n ce- IN
=
watt
I F = i n te rm e
d iate
fre- ΝΙΓ " normally closed
capacitance W-'
=
with
quency ΝΕ = neon R M O = rack mount only WTV
=
working
inverse
IM PG " impregnated ΝΕ G
=
n
egative τ m s = root- m ean -s qu are voltage
in inch n F = na n nfa rad R Νπ = round WW
= wir ewnun d
ΙΝΓΠ = i n ca
n
d
escent ΝΙ
PI,
= n ic k el
plate
ROM = read-My memory W/o " without
1 ΝΓΙ .
=
inc1Ude( Α ) ΝΙΠ " normally open R &Ρ = rack and p an el
ΥΤ G " yttrium-iron-garnet
ΙΝΡ = i np ut
NOM = n o m i n al R W V = reverse working Zo " characteristic
INS " insulation NORM " normal
voltage impe d ance
TNT
= i n ternal ΝΡΝ =
negative-
S = scattering parameter
kg " kilogram
positive-negative
α - sernnd (ti m e)
kH z
= kilohertz ΝΡΠ = negative -positive = .second (plane angle)
k il = k iln hm zero ( z
ero
tempera-
S- Α =
slow-blow
( f use)
kV " kilovolt ture coefficient) (used in parts list)
III = pound NR FR " not recommended
%ΓR = silico n controlled
1 .('
= inductance- for field re p l ace m ent
r
ectifier screw
NOTE
capacitance λλ
S
R " not separately
S F = aele n i um
All abbreviations in t h e parts
LED
= lig h t-e m itti n g diode replaceable SECT z sections
list will he in u
p
p
e
r Γααe .
L F " low frequency as " nanosecond
S ΕΜίΓΠΝ = semicon d ucto r
I .G
= long nW = ηαππωα tt SH F =
s
u pe
rh ig
h fre-
Ι . Η = left ha n d π R Π " order by description
qu ency
LIM = li m it OD
=
outside d ia m ete r Si = silico
n
Ι . ΙΝ
=
li
nea r tape r (used in OH
=
oval h ea d Sill
=silver
parts list) OP ΑΜΡΙ , " operational amplifier
ςΙ . = sli d e
b in
= li nea r OFT " option
S NR = signal-to-noise ratio
MUL TI
PL I ER S
Ι . Κ
Π% Γ " oscillator
S ΡΠΤ = single-pole, double-
W AS H " lock washer OX
=
oxide
throw
ΙΑ " low .
local
oscillator η z = ounce
S
Ρ G
=
spring
Ι Α G = logar it hm ic tape r Ω = n hm
S R =
sp
lit ring A b brwi N b n Ρπθχ Μυ Moo
ι nse d in parts list)
Ρ
= pea
k
(use
d
in
parts
SPST = single-pole, single-
Ing = Inga r it hm lic)
list) t
h row
LPF
= low pass filte r PAM
=
p u lse-a m p l it u de
ς 4
Α
= single s
ί
d eba n d Τ te τα
1012
hV = low voltage modulation
SST = stainless steel G g i g α ΙΠΡ
m = m
ete
r (
d ista
n
ce) PC = printed circ ui t STI, = steel Μ
m
ega
10'
m A = m illia m pere
ΡΓΜ = pulse-code modula- SQ = s qu
a
m
k kiln 10 3
ΜΑΧ
= m axi mum
tion ; pulse-count S W R =
sta
n
d ing-wave
ratio
da d eka 10
ΜΩ = m egn hm
modulation SYNC =
sync
h ron ize
d deci 1 Π- ι
MF
G = m pg 0 0 4 ) (used in ΡΠΜ = ρυ 1 π " υτα t ίπη
Τ = ti m e d
(slow-blow ,
ι ιe n ti 1 Π-`
parts list)
modulation fuse) m mi l li 1W : '
MET F Ι . Μ
= m etal fil m pF = p icnfa τa d ΤΑ = ta n talu m μ
micro 1( Υ "
MET OX
=
m etal oxide ΡΗ R
R'/
.
" phosphor bronze ΤΓ = temperature n ηαηο ιπ -"
MF medium
frequency : ΡΗΙ , = Ph illips
compensating
P
ρί
c π 1 Π
- ιχ
m
ίΓ rofa r a d ( u sed in PIN = positive-instri n sic-
ΤΙ ) = ti m e delay f fe m to 1 π - ι '
parts list)
ne μ ative TERM = ter m i nal α attn
1 Λ -"