Philips BLF278 - Scattering Parameters

2003 Sep 19 20
Philips Semiconductors Product Specification
VHF push-pull power MOS transistor BLF278
BLF278 scattering parameters
V
DS
= 50 V; I
D
= 500 mA; note 1
Note
1. For more extensive s-parameters see internet:
http://www.semiconductors.philips.com/markets/communications/wirelesscommunications/broadcast.
f (MHz)
s
11
s
21
s
12
s
22
|s
11
| ∠Φ |s
21
| ∠Φ |s
12
| ∠Φ |s
22
| ∠Φ
5 0.87 −142.1 60.05 104.3 0.00 −19.4 0.83 160.9
10 0.88 −159.8 32.09 91.4 0.00 0.68 167.5 165.8
20 0.88 −169.0 15.70 77.3 0.01 13.4 0.62 177.6
30 0.88 −171.2 9.98 68.4 0.01 3.4 0.64 −175.8
40 0.89 −172.2 6.99 61.0 0.01 −4.4 0.66 −171.2
50 0.91 −172.9 5.24 55.0 0.01 −10.3 0.70 −168.1
60 0.92 −173.5 4.08 49.6 0.01 −15.0 0.74 −166.8
70 0.93 −174.1 3.26 44.9 0.01 −18.3 0.78 −166.5
80 0.94 −174.7 2.66 41.0 0.01 −19.8 0.80 −166.5
90 0.95 −175.2 2.22 37.5 0.00 −19.7 0.83 −166.7
100 0.95 −175.7 1.88 34.0 0.00 −18.0 0.85 −167.4
125 0.97 −176.9 1.27 26.8 0.00 −1.9 0.88 −169.4
150 0.97 −177.9 0.91 22.7 0.00 35.3 0.91 −170.0
175 0.98 −178.7 0.69 19.5 0.00 65.3 0.94 −170.8
200 0.98 −179.5 0.54 16.0 0.00 78.0 0.95 −172.4
250 0.99 179.2 0.35 12.1 0.01 86.7 0.96 −174.0
300 0.99 178.1 0.25 9.1 0.01 87.8 0.98 −175.5
350 0.99 177.1 0.19 8.2 0.01 90.3 0.98 −176.5
400 0.99 176.1 0.14 7.2 0.01 91.4 0.99 −177.6
450 0.99 175.1 0.11 8.1 0.02 92.2 0.99 −178.3
500 0.99 174.2 0.09 9.7 0.02 91.5 0.99 −179.2
600 0.99 172.4 0.07 14.8 0.02 91.4 0.99 179.5
700 0.99 170.7 0.05 24.0 0.03 91.6 0.99 178.3
800 0.99 168.9 0.04 35.6 0.03 92.5 1.00 177.1
900 0.99 167.1 0.04 46.0 0.04 93.1 1.00 176.0
1000 0.99 165.2 0.04 60.3 0.04 94.1 1.00 175.0