Samsung R60 NP-R60FY series - DDR2 Power

Samsung
Confidential
C
A
D
D
DDR2 Power
3
C
SAMSUNG
23
2
SAMSUNG PROPRIETARY
ELECTRONICS
4
4
THIS DOCUMENT CONTAINS CONFIDENTIAL
PROPRIETARY INFORMATION THAT IS
1
1
EXCEPT AS AUTHORIZED BY SAMSUNG.
B
DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS
B
A
SAMSUNG ELECTRONICS CO’S PROPERTY.
PART NO.
For EMI enhancement
nostuff
1nF
C45
G_DDR
1nF
C48
PGND_2
PGND_3
16
REF
8
THERM
25
2
TON
VCCA
5
20
VDDP
3
VDDQS
VSSA
4
11
VTTEN
VTTIN_1
13
VTTIN_2
12
10
VTTS
15
VTT_1
14
VTT_2
SC486IMLTRT
U7
24
BSTCOMP
9
DH
23
DL
19
EN_PSV
1
6
FB
21
ILIM
LX
22
7
PGD
18
PGND_1
17
25V
100nF
C38
12.10
R70
6.3V
G_DDR
G_DDR
1%
R51
C44
1nF
C43
1000nF
0
R791
nostuff
10000nF
C565
nostuff
1K
R552
1%
2.2nF
D5
BAT54
13
C578
D2
67
D3 D4
8
4
G
1
S1 S2
23
S3
1%
150K
R56
G_DDR
Q11
AP6680AGM
5
D1
G_DDR
C566
10000nF
C50
1nF
P1.8V_AUX
20-A4
19-D419-C2
P5.0V
G_DDR
P1.8V_AUX
P0.9V
10000nF
C47
6.3V
P3.3V
C579
1000nF
6.3V
12.1
1%
R54
P5.0V_AUX
VDC
1nF
C792
nostuff
P5.0V_AUX
C49
6.3V
1000nF
SHORT7
0
45-D439-B1 34-C3
R30
1K
2
1%
Q12
RHU002N06
3
D
G
1
S
R47
1%
715K
2.2uH
G_DDR
L504
SIQ1048-2R2
3
D
G
1
S
2
R52
10K
1%
20K
R50
Q14
RHU002N06
100nF
C40
25V
R793
4.7
nostuff
P5.0V_AUX
P5.0V_ALW
6.3V
C42
10000nF
3.3
R46
G_DDR
25V
MEM1_REF
C39
100nF
1%
R49
300K
INSTPAR
SHORT524
1%
12.1 1%
R554
D
3
1
G
2
S
VDC
34-C3
150K
R55
AL
2.5V
330uF
EC505
RHU002N06
Q13
P1.8V_AUX
1%10K
R29
470K
R53
Q506
D1
56
D2 D3
78
D4
G
4
1
S1
2
S2 S3
3
nostuff
12.1
1%
R48
AP6680AGM
C51
1000nF
6.3V
6.3V
C41
1000nF
G_DDR
R68
0
nostuff
R69
100K
1%
KBC3_SUSPWRON
KBC3_1.8V_EN#
CHP3_ALINK_RST#
AUX_PG
G_DDR
MICOM_P3.3V
C52
10nF