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Supermicro X13SCW-F - Memory Test on Warm Boot; Maximum Memory Frequency; ECC Support; Max TOLUD

Supermicro X13SCW-F
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Chapter 4: UEFI BIOS
77
Memory Test on Warm Boot
Use this feature to enable or disable memory test on a warm boot. The options are
Disabled and Enabled.
Maximum Memory Frequency
This feature selects the speed of the memory installed. The default setting is Auto. All
values are in MT/s.
ECC Support
Use this feature to enable or disable DDR ECC support. The options are Disabled and
Enabled.
Max TOLUD
This feature sets the Top of Low Usable DRAM (TOLUD) value. The TOLUD value
species the memory space used by internal graphics devices, GTT Stolen Memory, and
TSEG, respectively, if these devices are enabled. The options are Dynamic, 1 GB, 1.25
GB, 1.5 GB, 1.75 GB, 2 GB, 2.25 GB, 2.5 GB, 2.75 GB, 3 GB, 3.25 GB, and 3.5 GB.
Note: TSEG is a block of memory that is only accessible by the processor while op-
erating in System Management Mode (SMM).
Retrain on Fast Fail
Use this feature to enable or disable restarting of the Memory Reference Code (MRC) in
Cold mode if the memory test fails during fast ow. The options are Disabled and Enabled.
Row Hammer Mode
Use this feature to select which mitigation to use against Row Hammer. Row Hammer
attacks attempt to trigger bit ips in DRAM chips by repeatedly hitting a row of memory
cell until electrical leakage triggers a bit ip in a di󰀨erent row. Pseudo target row refresh
(pTRR) automatically refreshes a victim row to mitigate Row Hammer attacks when a
row activation threshold is exceeded. Refresh management (RFM) triggers additional row
refresh commands when a memory controller detects too many row activations. RFM
falls back to pTRR if RFM is unavailable. The options are Disabled, RFM, and pTRR.
RH LFSR0 Mask (Available when "Row Hammer Mode" is set to RFM or pTRR)
Use this feature to set the Row Hammer linear feedback shift register (LFSR) mask for
the Row Hammer pTRR feature. The options are a number ranging from 1/2^1 to 1/2^15.
The default setting is 1/2^11.

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