EOS P96 - Page 38

Doc:
Issue
Date
Page
VLT-MAN-ESO-14650-4942
P96
24.06.2015
38 of 161
ESO, Karl-Schwarzschild-Str. 2, 85748 Garching bei München, Germany
UVB
VIS
NIR
Detector type
E2V CCD44-82
MIT/LL CCID 20
substrate
removed Hawaii
2RG
Operating
temperature
153 K
135 K
81 K
QE
80% at 320 nm
88% at 400 nm
83% at 500 nm
81% at 540 nm
78% at 550 nm
91% at 700 nm
74% at 900 nm
23% at 1000 nm
85%
Number of
pixels
20483000
(20484102 used in
windowed readout)
20484096
20482048
(10242048
used)
Pixel size
15 µm
15µm
18µm
Gain
(e
-
/ADU)
High: 0.62
Low: 1.75
High: 0.595
Low: 1.4
2.12
Readout noise
(e
-
rms)
Slow: 2.5
Fast: 4.5
Slow: 3.1
Fast: 5.2
Short DIT: ~25
DIT>300s: ~8.0
Saturation
(ADU)
65000
65000
45000 (for a
single readout).
TLI: 42000 ADUs
used for long
DITs
Full frame
readout time
(s)
1x1, slow-fast: 68-16
1x2, slow-fast: 34-8
2x2, slow-fast: 17-4
1x1, slow-fast: 89-21
1x2, slow-fast: 45-11
2x2, slow-fast: 22-5
1.46 (for a single
readout)
Dark current
level
<0.2e-/pix/h
<1.1e-/pix/h
21 e-/pix/h
Fringing
amplitude
-
~5% peak-to-valley
-
Non-linearity
Slow: 0.4%
Fast: 1.0%
Slow:0.8%
Fast: 0.8%
<1% up to 45000
ADUs
Readout
direction
Main disp. dir.
Main disp. dir.
-
Prescan and
overscan areas
1x1 and 1x2: X=1-48
and 2097-2144
2x2: X=1-24 and 1049-
1072
1x1 and 1x2: pix 39-48
and 2097-2144
2x2: 19-24 and 1049-
1072
-
Flatness
<8µm peak-to-valley
Table 6: measured properties of the X-shooter detectors