©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com
FDP20N50 / FDPF20N50 Rev. B
FDP20N50 / FDPF20N50 500V N-Channel MOSFET
February 2007
UniFET
TM
FDP20N50 / FDPF20N50
500V N-Channel MOSFET
Features
• 20A, 500V, R
DS(on)
= 0.23: @V
GS
= 10 V
• Low gate charge ( typical 45.6 nC)
•Low C
rss
( typical 27 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
Absolute Maximum Ratings
Thermal Characteristics
TO-220
FDP Series
G
S
D
TO-220F
FDPF Series
G
S
D
D
G
S
Symbol Parameter FDP20N50 FDPF20N50 Unit
V
DSS
Drain-Source Voltage 500 V
I
D
Drain Current - Continuous (T
C
= 25qC)
- Continuous (T
C
= 100qC)
20
12.9
20 *
12.9•• • •
A
A
I
DM
Drain Current - Pulsed
(Note 1)
80 80•• • • A
V
GSS
Gate-Source voltage r30 V
E
AS
Single Pulsed Avalanche Energy
(Note 2)
1110 mJ
I
AR
Avalanche Current (Note 1) 20 A
E
AR
Repetitive Avalanche Energy (Note 1) 25 mJ
dv/dt Peak Diode Recovery dv/dt
(Note 3) 4.5 V/ns
P
D
Power Dissipation (T
C
= 25qC)
- Derate above 25qC
250
2.0
62
0.5
W
W/qC
T
J,
T
STG
Operating and Storage Temperature Range -55 to +150 qC
T
L
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
300 qC
Symbol Parameter FDP20N50 FDPF20N50 Unit
R
TJC
Thermal Resistance, Junction-to-Case 0.5 2.0 qC/W
R
TCS
Thermal Resistance, Case-to-Sink Typ. 0.5 -- qC/W
R
TJA
Thermal Resistance, Junction-to-Ambient 62.5 62.5 qC/W
* Drain current limited by maximum junction temperature
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