©2000 Fairchild Semiconductor International Rev. A, February 2000
TIP31 Series(TIP31/31A/31B/31C)
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T
C
=25°C unless otherwise noted
Electrical Characteristics T
C
=25°C unless otherwise noted
* Pulse Test: PW≤300µs, Duty Cycle≤2%
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage : TIP31
: TIP31A
: TIP31B
: TIP31C
40
60
80
100
V
V
V
V
V
CEO
Collector-Emitter Voltage : TIP31
: TIP31A
: TIP31B
: TIP31C
40
60
80
100
V
V
V
V
V
EBO
Emitter-Base Voltage 5 V
I
C
Collector Current (DC) 3 A
I
CP
Collector Current (Pulse) 5 A
I
B
Base Current 1 A
P
C
Collector Dissipation (T
C
=25°C) 40 W
P
C
Collector Dissipation (T
a
=25°C) 2 W
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature - 65 ~ 150 °C
Symbol Parameter Test Condition Min. Max. Units
V
CEO
(sus) * Collector-Emitter Sustaining Voltage
: TIP31
: TIP31A
: TIP31B
: TIP31C
I
C
= 30mA, I
B
= 0 40
60
80
100
V
V
V
V
I
CEO
Collector Cut-off Current
: TIP31/31A
: TIP31B/31C
V
CE
= 30V, I
B
= 0
V
CE
= 60V, I
B
= 0
0.3
0.3
mA
mA
I
CES
Collector Cut-off Current
: TIP31
: TIP31A
: TIP31B
: TIP31C
V
CE
= 40V, V
EB
= 0
V
CE
= 60V, V
EB
= 0
V
CE
= 80V, V
EB
= 0
V
CE
= 100V, V
EB
= 0
200
200
200
200
µA
µA
µA
µA
I
EBO
Emitter Cut-off Current V
EB
= 5V, I
C
= 0 1 mA
h
FE
* DC Current Gain V
CE
= 4V, I
C
= 1A
V
CE
= 4V, I
C
= 3A
25
10 50
V
CE
(sat) * Collector-Emitter Saturation Voltage I
C
= 3A, I
B
= 375mA 1.2 V
V
BE
(sat) * Base-Emitter Saturation Voltage V
CE
= 4V, I
C
= 3A 1.8 V
f
T
Current Gain Bandwidth Product V
CE
= 10V, I
C
= 500mA 3.0 MHz
TIP31 Series(TIP31/31A/31B/31C)
Medium Power Linear Switching Applications
• Complementary to TIP32/32A/32B/32C
1.Base 2.Collector 3.Emitter
1
TO-220
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