©2003 Fairchild Semiconductor Corporation Rev. A, April 2003
FQP7N80C/FQPF7N80C
QFET
TM
FQP7N80C/FQPF7N80C
800V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies.
Features
• 6.6A, 800V, R
DS(on)
= 1.9Ω @V
GS
= 10 V
• Low gate charge ( typical 27 nC)
• Low Crss ( typical 10 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Absolute Maximum Ratings T
C
= 25°C unless otherwise noted
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol Parameter FQP7N80C FQPF7N80C Units
V
DSS
Drain-Source Voltage 800 V
I
D
Drain Current
- Continuous (T
C
= 25°C)
6.6 6.6 * A
- Continuous (T
C
= 100°C)
4.2 4.2 * A
I
DM
Drain Current - Pulsed
(Note 1)
26.4 26.4 * A
V
GSS
Gate-Source Voltage ± 30 V
E
AS
Single Pulsed Avalanche Energy
(Note 2)
580 mJ
I
AR
Avalanche Current
(Note 1)
6.6 A
E
AR
Repetitive Avalanche Energy
(Note 1)
16.7 mJ
dv/dt Peak Diode Recovery dv/dt
(Note 3)
4.5 V/ns
P
D
Power Dissipation (T
C
= 25°C)
167 56 W
- Derate above 25°C 1.33 0.44 W/°C
T
J
, T
STG
Operating and Storage Temperature Range -55 to +150 °C
T
L
Maximum lead temperature for soldering purposes,
1/8I from case for 5 seconds
300 °C
Symbol Parameter FQP7N80C FQPF7N80C Units
R
θJC
Thermal Resistance, Junction-to-Case 0.75 2.25 °C/W
R
θJS
Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C/W
R
θJA
Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W
TO-220
FQP Series
G
SD
TO-220F
FQPF Series
G
S
D
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