JVC AX-Z1010TN - Page 51

Z1I010TN
Note (1)
PC Board Ass‘y
Designated Areas
ENP-0 14 [B
+
the U.S.A., Canada
ENP-014 [C
Other Countries
ENP-014
the U.K.
Australia, Continental Europe,
ENP-014
Transistors
West Germany
DTA114YS
A ITEM PART NUMBERIDE SCRIPT !1O0ON JAREA
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Q101| DTC144ES SILICON
Q121) 25A1029(C-D) SILICON
Q112) 28C535(C) SILICON
Q113 2SAS64A(R-S) SILKS CON
.Q114) OTC1a4vS IL TCON
Q201; 2SK170¢V) «Est
Q202} 28K170¢V) F.E.T
Q203) 2503068 SILICON ANYO
Q204) 25C3068 SILICON ANYO
a 9205) DTAII4YS SILICON. fROHM
Q244} 254 7D) SILICON ITACHL
Q262| DTC114YS SILICON ‘OHM
264] DTCi14yYsS SILICON OHM
Q265) 2SC1685¢(R-S) SILICON
ashe 9266, DTAI44ES | BIL ECON
Q267] 2503068 SILICON
Q268} 28C3068 SILICON ANYO
Q269| 28C3068 SILICON ANYO
270) 2803068 ISLLICON ANYO
9274 2584274(R/S)_ BILICON SANYO
Q272| 28C2060(Q-R) SILICON OHM
Q273; 2SA934(Q-R) ILICON OHM
Q@275| 2SA1015¢Y-/GR) ILICON OSHIBA B
275| 25B2274(R,S) SILICON ANYO. ic
Q275; 26B2274(R,8} (SILICON ANYO ‘D
Q275| 28B1274(R,8) SILICON ANYO E
Q277| 28C2060¢(Q-R) SILICON
Diodes
Fane nUbeR DESCRIPTLONIAREA
MAKER s
010%) 188133 SILICON OHM
D102 188133 SILICON OHM
D103 18$133 SILICON OHM
188133 SILICON OHM
D106 188133 SILICON _ OHM
D107) 1$$133 SILICON OHM
D108 189133 SILICON OHM
MA700 ZENER JATSUSHITA
185133 SILICON OHM
488133. SELICON OHM
18$133 SILICON OHM
RD9.1J3SB3 ZENER NEC
RD9.1JISB3 ZENER Ec
MTZ3.358 ZENER ROHM
JMTZ4.7J8 0 RENER OHM
RDS.6JSB3 ZENER EC
ROS .65S83 ZENER ec
188133 SILICON OHM
188133 SILICON ROHM
188133. SELECON
1S8$133 SILICON
1ssi33 SILICON
MTZ20JC ZENER
MTZ20JC ZENER
.MTZ7 SIC ZENER
MTZ135C ZENER
MTZ13J5C ZENER
SODF2SFC ISELICON IHONINTER
3ODF2SFC SILICON INIHONINTER
. SODF2SEC $3 NIHONINTER
3ODF2SFC SILICON WIHONINTER
RDi8JSB3 ZENER
RD18JSB3 ZENER
20E€2FA-S ISI.-DIODE INIHONINTER
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20E2FA-5 jS1.DIODE IHONINTER
20E2FA-5S ISI.DIODE IHONINTER
RD12JSB3 ZENER NEC
RD12JSB3 ZENER NEC
MTZ6 816, EN
MTZ10JC ZENER ROKM
A: SAFETY PARTS
Capacitors
PART NUMBER
DESCRIPTION |AREA
as52] DTC114¥S SILICON
Q553} DTA114YS ISELICON QETBIHM-106
Q554 DTA114YS StLICON QETB1EM-107
DTC114YS SILICON ROHM QETBIEM-476
oT ILICON C103| QETBIEM-476
Q557] DTC144ES ILICON s
a601] 2sK246(Y) FET OSHIBA QCC2LEM-473
Q602} 2SK246¢Y) FET OSHIBA QCC21EM-473 «OL7MF
Q603| 2802064¢F-G) SILICON. QCC2LEM-473 +047MF
Q604) 2SB1187¢F-G) SILICON OHM QFVB1HJ-163 OUMF |
605; 2SD2061¢F-G) SILICON ‘OHM Fe . aa
9606) 25B1187(F,-G) SILICON OHM @CZ0205-155 :
Q607} 2801944 (JK) SILICON OHM QCC2tEM-473 0 .047MF
(Gs @C20205-155 SME
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AI TEM PART NUMBER/DESCRIPTItONI|aREA hud. GETBLAND 107. ROOME.
a MAKER ©1218 @CS21HJ-471
€119 acT30UJ-220
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LC102| TC74HCOOAP Itc. OSHIBA C124} @cS2ins-221
C103) TC74HCOOAP IT .c. OSHIBA Searcy
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C114] TC74HC74AP H.C. OSHIBA C139 QETB1CM-226
C115] TC7SHC74AP 1. osHIBA ff Ciéd @CBB1HK-221 20PF
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C261, TC7SHCT4AP IT OSHIBA C147] @C$21HJ-270 TPE
fLE262) TEZAHC74AP IE LOSBIBA €148) GETBIAM-107 i OOMF
C263) TC74HC123P I OSHIBA C152] @CC21EM-473 sO47MF
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2-8 (No. 20115) A: SAFETY PARTS