JVC RX-807VTN

Note (1)
ENC-093
Scandinavia
,
Australia
Continental Europe
ENCO93
ENC.093 [H])
Transistors
———
I1TEMPART NUMBER; DESCRIPTION
Q@251 | DTC114YS
Q253 2S8C458(C-D)
Q254 | 295C458¢(C,D)
Q255 | 28C458¢(C-D)
0256 | 2864584
Q258 | AAIL4M
Q259 | DTC114YS
Q261 AARIL4SM
Q263 | AATA4P
SILICON ROHM
SILICON HITACHI
SILICON HITACHI
ISILICON HITACHI
SILICON OHITACHT |
SILICON NEC
SILICON ROHM
SILICON NEC
SILICON NEC
0362 | 25K301(P,Q) |F.E.T MATSUSHITA
Q362 | 2SK301¢P,Q) FE o MATSUSHITA
Q365 | DTAL14YS SILICON ROHM
Q366 | AALTL4&M SILICON NEC
Q451 28C2235¢0-Y) SILICON TOSHIBA
2SA965(0/Y) = TOSHIBA __
SILICON
DTAI44ES SILICON
2SK301€P-Q) FELT
2SK301(P,Q)
MATSUSHITA
MATSUSHITA
_ MATSUSHITA
DTA114YS
2SD655(D-E)
AALL4M
L.2SD655(D-E)
AAIL4M
ANIL4M
AAIL&M
ANIL4M
ISILICON ROKM
SILICON HITACHI
SILICON NEC
SILICON HITACHI
SILICON
SILICON
SILICON
SILICON
SILICON
2SK163¢CL1) FLE.T
A BSARETY! (PAIR‘T:S
APART NUMBERI DES CRiPTION
TC74HCS9SAP 1.C. TOSHIBA =]
TC74HCS9OSAP GPE TOSHIBA
MN1i281¢P,Q) 1.C. MATSUSHITA
VC4580LD 1.¢ DAINICHI
TC9164N L.c TOSHIBA
VC4580L I DAINICHI
TCO163N 1 TOSHIBA
TOOLT7P 1 TOSHIBA
VC4580L I DAINICHI
| T9276 i TOSHIBA |
VC4580L if DAINICHI
vVC4580L i DAINICHI
LA3607S I SANYO
LA3607S ag SANYO
A NESSBOL H WDAINICHT
LC7522 ef SANYO
UPC324C ha NEC
VC4S580L a DAINICHI
RC78L12A I DAINICHI
NSM2275b i CW DAINICAD Oo}
TC4SO66BP I TOSH
MS0198P I MITSUBISHI
NJIM78MOS5SFD I DAINICHI
UPC324C I NEC
1C672 | MS1523AL 1 MITSUBISHI
A DSARETY: iPIAIR:T!S:
Diodes
RX-807VTN
PART NUMBER
188133
188133
188133
18S133
488133
18$133
1S$133
18S133
18S133
{188133
18$133
188133
18$133
MTZ5.630 0
1$$133
MTZS.6J5C
188133
MTZ6.BNC
185133
MTZ8.2NC
MTZ8.2NC
1$$133
1$5133
1$$133
4$S133 °°
‘MTZ6.85C0 0
iDESCRIPTION esas)
SILICON ROKM
SILICON ROHM
SILICON ROHM
SILICON ROHM
SILICON ROWM fo
SILICON ROHM
SILICON ROHM
SILICON ROHM
SILICON ROM
SILICON ROWM P|
SILICON ROHM
SILICON ROHM
SILICON ROHM
SILICON ROHM
ENER ROHM
SILICON ROHM
SILICON ROHM
ZENER ROHM
SILICON ROHM
ZENER | RORM
ZENER ROHM
SILICON ROHM
ZENER ROHM
ZENER ROHM
SILICON OHM
SILICON ROHM
SILICON ROHM
QcY21HK-102
C253 | QETB1HM-225
C254 | QETB1HM-475
Q@CBB1HK-561
QCBB1HK-S61
C265 | @FVB1HJ-564
C266 | @CBB1HK-561
C267 | @CF21HP-103
C301 | QETB1HM-475
C303 | @CBB1HK~101
C304 | @CBB1HK-101
C305 | QCY21HK-182
£306 | QCY21HK—-182
C307 | aCY21HK-682
C308 | @CY24HK-682
C309 | @CBB1HK-101
€310 | @CBB1HK-101
(C341 | QETB1HM-475
C312 | QETB1HM-475
C313 | QETB1AM-107
C314 | QETB1AM-107
C317 | QETBIEM-476
0319 | @cF21HP-103
€320 | @CF21HP-103
C321 | @FVBikJ-124
C322 | QFV81HJ-124
C323 | QFVB1HJ-124
C325 | @FVB1HJ-124
(331 | @CBB1HK-331
€332 | @CBB1HK-331
¢333 | @CBBIHK-331__
C334 | QCBB1HK-331
€335 | @CBB1HK-331
€336 | OCBB1HK-331
¢339 | QCBB1HK-334
340 | @CBB1HK-331
€341 | @CBB1HK-331
€342 | @CBB1HK-331
C345 | @CBB1HK-331
€346 | Q@CBBIHK-331
347 | @CBBIHK-331
C328 | seesine-ast
Q@CBB1HK-334
@CBB1HK-331
C353 | @CBBiHK-331
€354 | @CBB1HK-331
C358 | @CBB1HK-331
C359 | QCF21HP-103
€360 | QCF21HP-103
C361 | QCF21HP-103
C505 T GETHLBN ESE OTF
“C357 | @CBB1HK-331 Bs.
CERAMIC
ELECTRO
ELECTRO
CERAMIC
-S6MF SOV T.FILM
S6OPF SOV CERAMIC
-O1MF SOV CERAMIC
-7MF SOV. ELECTRO te
&.7MF SOV ELECTRO
MOOPF 5OV CERAMIC
MOOPF SOV CERAMIC
hB0oPr 50V CERAMIC
ABOOPF SOV. CERAMIC tine. te
BOOPF 50V CERAMIC +
BOOPF SOV CERAMIC
MOOPF 50V CERAMIC
OOPF SOV CERAMIC
w.7MF SOV. ELECTRO
M.7MF «SOV. ELECTRO
HOOMF 10V ELECTRO
hOOME 10V¥. ELECTRO
7ME 25V ELECTRO
Ej | aeaneens 25v ELECTRO}
0.01MF SOV CERAMIC
-O1MF SOV CERAMIC
-12MF SOV) T.FILM
-12MF SOV) T.FILM
cleMF SOV TSFILM
-12MF.0SOV) OT SFILM
-12MF SOV) T.FILM
ZOPF SOV CERAMIC H
3ZOPF SOV CERAMIC H
BSOPF SOV. CERAMIC 4 Me.
ZOPF SOV CERAMIC H
3OPF 50V CERAMIC H
B30PF SOV CERAMIC H
S30PF SOV CERAMIC H
BSOPF 50V CERAMIC J | Bid
B3OPF SOV CERAMIC H
3OPF SOV CERAMIC Hi
Bsorr SOV CERAMIC H
3OPF 5OV CERAMIC H
SOPF 50V. CERAMIC 00 OH
30PF 50V CERAMIC sian
3OPF 5OV CERAMIC H
B30PF SOV CERAMIC H
B3OPF SOV CERAMIC H
BSOPF SOV. CERAMIC | Hd
B30PF SOV CERAMIC H
B3OPF° SOV CERAMIC H
-O1MF SOV CERAMIC
-O1MF 5OV CERAMIC
ERAMIC i
ETY: iPAIR-TS
(No. 20333) 2-15