Nikko Gamma I - Page 18

SEMICONDUCTOR
DATA
NOT et Ge: Germanium
A: Alloy Of : Drift-fieid M : Mesa
Si: Sillicon B : Base E : Epitaxial P : Planer
O : Diffused G : Grown Pc : Point-contact
T
R
A
NSI
STO
R
Ss
Dd:
Doubdle-diffused
J
Junction
Td:
Triple-diffused
MAXIMUM
RATINGS
Absolute-Maximum
Values:
do
°
ae?
:
(Tas
ak
unless
Stherenie
soecitiad)
ELECTRICAL
CHARACTERISTICS
Tipical
Values:
(Tag
=
25
C
unless
otherwise
specified)
DEVICE
STRUC-
|
Collector-
itter-
|
Collector
|
Collector
|
Jundtion
Static
Forward-Current
CollectorEmitter
MANU-
APPLICATIONS
to-Bace
Current
|
Dissipa-
Transfer
Ratio
Saturation
Voltage
.
TYPE
Turet
:
FACTURE
RF: conv., Mix., en
Pa
Osc.
RF: Conv., Mix.. eed
el
Ce
a
Cc
Fa
{Q, P)
reser
[nett
|
>
|
3
|
|
am
|
ras
|
1
[om
fasmm|
vo
|
2
|
on
|
of
[ro
|
wo
[-w
[oe
|
=25ps max.
RF:
Conv.
Mix.,
hes]
300
|
cies
=
NPN
25
a0
Farivomer
[Sy
|
so
|
wo
|
am
[title
|
|
1
[2
[9
|
5
[ose
|
os
|
alosal
+»
|
s
[osm]
|
|
8
So
a
on
280381 (L, M)
Date Leak
Current
Gate to Drain
Breakdown
Gate to Source
Cutoff Voltage
Test Test
IGSS Iconditions lOSS | conditions
(mA)
Vos=5V [1.5 | VOS=5v
VGS=0 ~6 |!D=10uA
VGS=0
Forwerd Transfer
Admittance
Noise Figure
Test
Conditions
VGS=0
MANUFACTURE
FIELD
EFFECT
TRANSISTORS
EVICE | APPLICA-
TIONS
FM tuners,
VHE tuners
Vos=5V
Zin, out
=§00
f=100MHz
V0S=10V VWoS=10V |-4 V0S=10V
ely
tle
oid
iD=1
uA
|
max.
f=100MHz
TOSHIBA
tuners cnann
Nessa” V0S=15V ee
FM
tuners,
channel
1D=100uA
Maen
10=10mA
VHF
tuners
|
gual
gate
VOS=15v
|
Vazs
|,0-5mA
t=200MHz
MOS-FET
Vo1s=0
|
=—4
|f!
kHz
10=100uA | max.
VOS=15V
FM
tuners,
on
1D=100uA
vousav
VHF
tuners}
channel
VG2S=4V
VbS=15v
|
Vazs
|!D=10mA
HITACHI
dual
te
VG1S=0
|=-03)}f=1
kHz
MOS-FE
ID=100uA
|
min.
>
VoS=15V
|
VGIS
V0S=15V
FM
tuners,
|
“channel
Meee
ed
es
1D-100uA
pong
VG2s=4V
Vo=15V
Vo=15V
vosink
VHF
tuners
|
gepletion
2
~24
TYps-15v
[Vazs
|10=10mA
ID=10mA
f=100
MHz
f=100MHz
dual
gate
VG2S=4V
Vois-0
|=—25|f7t
kHz
f=1
MHz
MOS-FET
1D=100uA
|
max.
MAXIMUM RATINGS Absolute — Maximum Values:
(Ta = 25°C uniess otherwise specified)
ELECTRICAL CHARACTERISTICS Tipicel Values:
(Ta = 25°C unless otherwise specified)
Reverse Peak Reverse Peak Peak Average
Reverse | Voltage {Forward |Forward |Rectified | Surge
Voltage | Current | Current | Current
Forward Current | Forward Voltage
APPLICA:
REvICE structure!
TYPE TION
re
[Fromm
cP
Detectors
GO-4-
MAXIMUM RATINGS
Absolute — Maximum Vaiues:
(Ta = 25 C unless otherwise specified)
Total
Power
Zener
Junction
Defferential
Resistance
Temperature
Coefficient
DEVICE
APPLICA-
structure!
Dissipation
Current
Temperature
Test
Test
TYPE
TION
iti
iti
Condition
Condition
Ts
YF = -3.6 mv/°C
(IF = 1.5 mA}
1.34
(Tax
TOSHIBA
60°C)
pos
a
ee
ee
ec
TOSHIBA
TOSHIBA
TYP. 3.0 mcd.
(IF =15 mA)
woseet) | | seh
sorsews)
|
|
SP
18