Quectel EC25 series

Table 6:
VB
Pin Name
VBAT_RF
VBAT_BB
GND
3.6.2. D
e
The power
below 3.3
V
voltage dro
p
To decreas
e
ceramic ch
i
from an ex
t
structure.
T
should be
n
Three cera
m
capacitors
s
suggested
t
power is m
o
E
B
AT and G
N
Pin N
o
57,58
59,60
8,9,19
,
36,46,
48,50
~
72, 85
~
e
crease V
o
supply ran
g
V
. The follo
w
p
will be les
s
VB
A
Min.3.
e
voltage d
r
i
p (MLCC)
c
t
ernal appli
c
T
he width o
f
n
o less than
m
ic capacit
o
s
hould be pl
t
hat you sh
o
re than 0.5
W
E
C25-A_U
s
N
D Pins
o
.
,
22,
~
54,56,
~
112
o
ltage Dr
o
g
e of the m
o
w
ing figure
s
s
in 3G and
A
T
3V
Figure 7:
P
r
op, a bypa
s
c
apacitor c
a
c
ation has t
o
f
VBAT_BB
2mm.In pri
n
o
rs (100nF,
aced close
t
ould use a
W
. The foll
o
s
e
r
_Manual
C
Descriptio
n
Power sup
p
part.
Power sup
p
baseband
p
Ground.
o
p
o
dule is fro
m
s
hows the
v
4G networ
k
Transmit
burst
P
ower Sup
p
s
s capacito
r
a
n provide t
h
o
be a singl
e
trace shoul
n
ciple, the l
o
33pF, 10p
F
t
o the VBA
T
zener diod
e
o
wing figure
C
onfidenti
a
n
p
ly for modu
p
ly for modu
p
art.
m
3.3Vto4.
3
v
oltage dro
p
k
s.
Drop
p
l
y
Limits
d
r
of about 1
0
h
e best co
m
e
voltage s
o
d be no le
s
o
nge
r
the VB
F
) are reco
m
T
pins. In ad
d
e
of which
shows the
s
a
l / Release
Mi
le RF
3.
3
le
3.
3
-
3
V. Make su
p
during tr
a
Transmit
burst
d
uring Tra
n
0
0µF with l
o
m
bination o
f
o
urce and e
x
s
s than 1m
m
AT trace is,
m
mended t
o
d
ition, in ord
reverse ze
n
s
tar structur
e
d 26 /
6
n. Ty
p
3
3.8
3
3.8
0
re the inpu
t
a
nsmitting b
n
smit Burst
o
w ESR sh
o
f
low ESR.
T
x
panded to
m
; andthe
w
the wide
r
it
o
be applie
d
er to get a
s
n
er voltage
e
of the po
w
L
EC25-AU
6
9
p
. Max
4.3
4.3
-
t
voltage wil
urst in 2G
Ripple
o
uld be use
d
T
he main p
two sub pa
w
idth of VB
A
will be.
d
to the VB
A
s
table powe
r
is 5.1V an
d
w
er supply.
L
TE Modul
e
ser Manu
a
. Unit
V
V
V
l never dro
p
network.Th
e
d
. Multi-laye
ower suppl
y
ths with sta
A
T_RF trac
e
A
T pins. Th
e
r
source, it i
s
d
dissipatio
n
e
a
l
p
e
r
y
r
e
e
s
n