Samsung SR-606EV - NPN Epitaxial Silicon Transistor; Electrical Characteristics

64 Samsung Electronics
KSR1005 NPN EPITAXIAL SILICON TRANSISTOR
SWITCHING APPLICATION (Bias Resistor Built In)
•Switching Circuit, Inverter, Interface circuit Driver circuit.
•Built in bias Resistor (R,=4.7KΩ, R=10KΩ)
•Complement to KSR2005
ABSOLUTE MAXIMUM RATINGS (Ta=25˚c)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCBO
VCBO
IC
PC
TI
Tstg
Rating
50
50
10
100
300
150
-55-150
Unit
V
V
V
mA
mW
˚C
˚C
ELECTRICAL CHARACTERISTICS (Ta=25˚C)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Output Capacitance
Current Gain-Bandwidth Product
Input Off Voltage
Input On Voltage
Input Resistor
Resistor Ratio
Symbol
BVCBO
BVCBO
ICBO
HC
VCE(sat)
Cob
Fr
Vi(off)
Vi(off)
R1
R1/R2
Test Condition
IC=10µA, IB=0
IC=100µA, IB=0
VCB=40V, IB=0
VCB=5V, IB=5mA
IC=10mA, IB=0.5mA
VCB=10V, IB=0
t=1MHz
VCB=10V, IC=5mA
VCB=5V, IC=100µA
VCB=0.3V, IC=20mA
Main
50
50
30
0.3
3.2
0.42
Typ
3.7
250
4.7
0.47
Max
0.1
0.3
2.5
6.2
0.52
Unit
V
V
µA
V
pF
MHz
V
V
KΩ
Equivalent Circuit
TO-92
1 Emitter 2 Collector 3 Base