10. 4Gbit NAND Flash Memory (U35)
ST NAND04G-B2D
a) Key Features
– Up to 8 Gbit memory array
– Cost-effective solution for mass storage
applications
– x8 or 16x bus width
– Multiplexed address/data
– x8 device: (2048 + 64 spare) bytes
– x16 device: (1024 + 32 spare) words
– x8 device: (128K + 4 K spare) bytes
– x16 device: (64K + 2 K spare) words
– Array split into two independent planes
– Program/erase operations can be
performed on both planes at the same time
– Random access: 25 µs (max)
– Sequential access: 25 ns (min)
– Page program time: 200 µs (typ)
– Multiplane page program time (2 pages):
200 µs (typ)
detection code (EDC)
– Block erase time: 1.5 ms (typ)
– Multiblock erase time (2 blocks):
1.5 ms (typ)
– Up to 8 Gbit memory array
– Cost-effective solution for mass storage
applications
face
– x8 or 16x bus width
– Multiplexed address/data
– x8 device: (2048 + 64 spare) bytes
– x16 device: (1024 + 32 spare) words
– x8 device: (128K + 4 K spare) bytes
– x16 device: (64K + 2 K spare) words
– Array split into two independent planes
– Program/erase operations can be
performed on both planes at the same time
– Random access: 25 µs (max)
– Sequential access: 25 ns (min)
– Page program time: 200 µs (typ)
– Multiplane page program time (2 pages):
200 µs (typ)
detection code (EDC)
– Block erase time: 1.5 ms (typ)
– Multiblock erase time (2 blocks):
1.5 ms (typ)
n
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