11. 128Mbit NAND Flash Memory (U17)
ST NAND128-A
a) Key Features
MEMORIES
– Up to 1 Gbit memory array
– Up to 32 Mbit spare area
– Cost effective solutions for mass storage
applications
– x8 or x16 bus width
– Multiplexed Address/ Data
– Pinout compatibility for all densities
– 1.8V device: VDD = 1.7 to 1.95V
– 3.0V device: VDD = 2.7 to 3.6V
– x8 device: (512 + 16 spare) Bytes
– x16 device: (256 + 8 spare) Words
– x8 device: (16K + 512 spare) Bytes
– x16 device: (8K + 256 spare) Words
– Random access: 12µs (max)
– Sequential access: 50ns (min)
– Page program time: 200µs (typ)
– Fast page copy without external
buffering
– Block erase time: 2ms (Typ)
OPTION
– Simple interface with microcontroller
– Program/Erase locked during Power
Transitions
– 100,000 Program/Erase cycles
– 10 years Data Retention
– Lead-Free Components are Compliant
with the RoHS Directive
– Error Correction Code software and
hardware models
– Bad Blocks Management and Wear
Leveling algorithms
– File System OS Native reference
software
– Hardware simulation models
b) Pinning
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