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accessing columns within it.
Row Precharge Time (tRP)
e number of clock cycles required between the issuing of the precharge command
and opening the next row.
RAS# Active Time (tRAS)
e number of clock cycles required between a bank active command and issuing the
precharge command.
Command Rate (CR)
e delay between when a memory chip is selected and when the rst active command can
be issued.
Write Recovery Time (tWR)
e amount of delay that must elapse aer the completion of a valid write operation,
before an active bank can be precharged.
Refresh Cycle Time (tRFC)
e number of clocks from a Refresh command until the rst Activate command to
the same rank.
RAS to RAS Delay (tRRD)
e number of clocks between two rows activated in dierent banks of the same
rank.
Write to Read Delay (tWTR)
e number of clocks between the last valid write operation and the next read
command to the same internal bank.
Read to Precharge (tRTP)
e number of clocks that are inserted between a read command to a row pre-
charge command to the same rank.
Four Activate Window (tFAW)
e time window in which four activates are allowed the same rank.
CAS Write Latency (tCWL)
Congure CAS Write Latency.
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