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General| Device Series | GW1N(R) |
|---|---|
| Category | Semiconductors |
| Manufacturer | GOWIN Semiconductor |
| Process Technology | 55nm |
| Embedded Memory | Yes |
| LVDS SERDES | Yes |
| Core Voltage | 1.2V |
| DSP Blocks | Yes |
| PLLs | Yes |
| Package Options | QFN, BGA |
| I/O Voltage | 3.3V |
| Operating Temperature | -40°C to +100°C |
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