IC
–
V
CE Characteristics
(Typical)
hFE
–
I
C Characteristics
(Typical)
hFE
–
I
C
Temperature Characteristics (Typical)
θj-a
–
t
Characteristics
IC
–
V
BE Temperature Characteristics
(Typical)
VCE(sat)
–
IB Characteristics
(Typical)
Pc
–
Ta Derating
Safe Operating Area (Single Pulse)
fT
–
I
E Characteristics
(Typical)
0
0
2
4
6
8
246
Collector-Emitter Voltage V
CE(V)
Collector Current IC(A)
10mA
2.5mA
2.0mA
1.8mA
1.5mA
1.3mA
1.0mA
0.8mA
0.5mA
I
B
=0.3mA
02 0.5 1 5 8
Collector Current I
C(A)
DC Current Gain hFE
(VCE=4V)
1000
5000
10000
40000
Typ
0
8
6
4
2
021
Base-Emittor Voltage V
BE(V)
Collector Current IC(A)
(VCE=4V)
125˚C (Case Temp)
25˚C (Case Temp)
–30˚C (Case Temp)
80
60
40
20
3.5
0
0 25 50 75 100 125 150
Ambient Temperature Ta(˚C)
Maximum Power Dissipation PC(W)
With Infinite heatsink
Without Heatsink
10 5053 100 200
150
0.05
0.03
1
0.5
0.1
10
20
5
Collector-Emitter Voltage V
CE(V)
Collector Current IC(A)
Without Heatsink
Natural Cooling
DC
100ms
10ms
0
3
2
1
0.2
10.5 105 20010050
Base Current IB(mA)
Collector-Emitter Saturation Voltage VCE(sat)(V)
IC=4A
IC=6A
IC=8A
(V
CE=4V)
0.2 0.5 5 81
Collector Current I
C(A)
DC Current Gain hFE
1000
500
5000
10000
50000
125˚C
25˚C
–30˚C
–0.02 –0.1 –1 –8
0
20
40
120
100
80
60
Cut-off Frequency fT(MHZ)
(VCE=12V)
Emitter Current I
E(A)
Typ
0.2
0.5
4
1
110505 100 5001000 2000
Time t(ms)
Transient Thermal Resistance θj-a(˚C/W)
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1559)
Application : Audio, Series Regulator and General Purpose
Symbol
V
CBO
VCEO
VEBO
IC
IB
PC
Tj
T
stg
2SD2389
160
150
5
8
1
80(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
■
Absolute maximum ratings
■
Electrical Characteristics
2SD2389
100
max
100max
150min
5000min∗
2.5
max
3.0max
80typ
85typ
Unit
µ
A
µ
A
V
V
V
MHz
pF
Conditions
V
CB=160V
V
EB=5V
I
C=30mA
V
CE=4V, IC=6A
I
C=6A, IB=6mA
I
C=6A, IB=6mA
V
CE=12V, IE=–1A
V
CB=10V, f=1MHz
(Ta=25°C) (Ta=25°C)
Symbol
I
CBO
IEBO
V(BR)CEO
hFE
VCE(sat)
VBE(sat)
fT
COB
External Dimensions MT-100(TO3P)
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