Intel P4000 - DATASHEET REV 001 - Table 7-43 DDR3 Signal Group DC Specifications

Electrical Specifications
100 Datasheet
NOTES:
1. Unless otherwise noted, all specifications in this table apply to all processor frequencies.
2. V
IL
is defined as the maximum voltage level at a receiving agent that will be interpreted as a logical low
value.
3. V
IH
is defined as the minimum voltage level at a receiving agent that will be interpreted as a logical high
value.
4. V
IH
and V
OH
may experience excursions above V
DDQ
. However, input signal drivers must comply with the
signal quality specifications.
5. This is the pull down driver resistance. Refer to processor I/O Buffer Models for I/V characteristics.
6. R
VTT_TERM
is the termination on the DIMM and in not controlled by the Processor.
7. The minimum and maximum values for these signals are programmable by BIOS to one of the two sets.
8. COMP resistance must be provided on the system board with 1% resistors. COMP resistors are to V
SS
.
Table 7-43.DDR3 Signal Group DC Specifications
Symbol Parameter
Alpha
Group
Min Typ Max Units Notes
1
V
IL
Input Low Voltage (e,f) 0.43*V
DDQ
V2,4
V
IH
Input High Voltage (e,f) 0.57*V
DDQ
V3
V
OL
Output Low Voltage (c,d,e,f) (V
DDQ
/ 2)* (R
ON
/
(R
ON
+R
VTT_TERM
))
6
V
OH
Output High Voltage (c,d,e,f) V
DDQ
- ((V
DDQ
/
2)* (R
ON
/
(R
ON
+R
VTT_TERM
))
V4,6
R
ON
DDR3 Clock Buffer On
Resistance
21 31 Ω 5
R
ON
DDR3 Clock Buffer On
Resistance
21 36 Ω 5
R
ON
DDR3 Command Buffer
On Resistance
16 24 Ω 5
R
ON
DDR3 Command Buffer
On Resistance
20 31 Ω 5
R
ON
DDR3 Control Buffer On
Resistance
21 31 Ω 5
R
ON
DDR3 Control Buffer On
Resistance
20 31 Ω 5
R
ON
DDR3 Data Buffer On
Resistance
21 31 Ω 5
R
ON
DDR3 Data Buffer On
Resistance
21 36 Ω 5
Data ODT On-Die Termination for
Data Signals
(d) 102
51
138
69
Ω 7
I
LI
Input Leakage Current ±500 μA
SM_RCOMP0
COMP Resistance (t) 99 100 101 Ω 8
SM_RCOMP1
COMP Resistance (t) 24.7 24.9 25.1 Ω 8
SM_RCOMP2
COMP Resistance (t) 128.7 130 131.3 Ω 8