Datasheet 21
Interfaces
NOTES:
1. System memory configurations are based on availability and are subject to change.
2. Only Raw Card D SO-DIMMs at 1066 MT/s are supported.
2.1.2 System Memory Timing Support
The IMC supports the following DDR3 Speed Bin, CAS Write Latency (CWL), and
command signal mode timings on the main memory interface:
• tCL = CAS Latency
• tRCD = Activate Command to READ or WRITE Command delay
• tRP = PRECHARGE Command Period
• CWL = CAS Write Latency
• Command Signal modes = 1n indicates a new command may be issued every clock
and 2n indicates a new command may be issued every 2 clocks. Command launch
mode programming depends on the transfer rate and memory configuration.
NOTES:
1. System memory timing support is based on availability and is subject to change.
2.1.3 System Memory Organization Modes
The IMC supports two memory organization modes, single-channel and dual-channel.
Depending upon how the SO-DIMM Modules are populated in each memory channel, a
number of different configurations can exist.
D
2
4 GB 2 Gb 256 M x 8 16 2 15/10 8 8K
F 2 GB 1 Gb 128 M x 8 16 2 14/10 8 8K
F 4 GB 2 Gb 256 M x 8 16 2 15/10 8 8K
Table 2-1. Supported SO-DIMM Module Configurations
1
Raw
Card
Version
DIMM
Capacity
DRAM
Device
Technology
DRAM
Organization
# of
DRAM
Devices
# of
Physical
Device
Ranks
# of Row/
Col
Address
Bits
# of
Banks
Inside
DRAM
Page
Size
Table 2-2. DDR3 System Memory Timing Support
Transfer
Rate
(MT/s)
tCL
(tCK)
tRCD
(tCK)
tRP
(tCK)
CWL
(tCK)
CMD Mode Notes
800 6 6 6 5 1n 1
1066 7 7 7 6 1n 1
888
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