SPECIFICATIONS
GENERAL
Semiconductors
Frequency Range
Frequency Synthesizer
Synthesizer Stability
Mode
Number of Channel
Operating Temperature
Power Voltage
Grounding
Antenna lmpedance
DC Current
Dimension
Weight
Transistors 58
FETs 8
I Cs 19
Diodes 63
144.00 to 147.995 MHz
Digital (TTL Logic) control of phase locked VCO
Less than k750 Hz at 25"~
FM
800
-20 to
+50°c
11.5 VDC to 16.0 VDC
(13.8 VDC
as
reference)
Negative grounding
50
52
Less than 1A in receive with no input signal
Less than 8A in transmit (HI)
Less than 4.5A in transmit (LOW)
(at 13.8 VDC)
182 mm (7-3116") wide
74 mm (2-718") high
270
mm
(10-518") deep
Approx. 2.8 kg (6.2 Ibs.)
TRANSMIT SECTION
RF Output Power High 25 watts (min.)
Low approx. 5 watts (adjustable up to 15 watts)
Modulation Variable reactance direct shift
Max. Frequency Deviation
k5
kHz
Spurious Radiation Less than -60 dB
Touch Tone Input Impedance 600
52
Microphone Dynamic microphone with PTT switch, 500
52
RECEIVE SECTION
Circuitry
Intermediate Frequency
Squelch Sensitivity
Pass Band Width
Selectivity
(2
Signal)
Image Rejection
Spurious Interference
lntermodulation
Audio Output
OPTION
i) Tone Squelch
Tone Deviation
Encorder Response
Frequency Stability
Tone Squelch Open Sensitivity
Tone Distortion
ii) Tone Burst
Burst Time
Double superheterodyne
1st IF 10.7 MHz
2nd IF 455
kHz
Less than 0.4 pV for 20 dB quieting
(Less than 1 ,uV for 30 dB SIN)
Less than 0.25 ,uV
More than 12 kHz
at
6 dB down
More than 72 dB at 30 kHz of adjacent channel
More than 70 dB
More than 60 dB
More than 66 dB
More than 1.5 watts across 8
52
load (10% distortion)
k0.5 kHz (adjusted)
Less than 0.5 sec.
Less than 21%
Less than SlNAD 10 dB
Less than 5%
Approx. 0.5
sec. (adjusted)
NOTE: The circuit and ratings may change without notice due to development in technology.
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