This P-Channel 2.5V specified MOSFET is produced using Fairchild’s advanced
PowerTrench
® process that has been especially tailored to minimize on-state resistance
and yet maintain low gate charge for superior switching performance.
These devices have been designed to offer exceptional power dissipation in a very small
footprint for applications where the larger packages are impractical.
16.2. Features
x 0D[U'6RQ PȍDW9 *6 -4.5 V, ID = -4.0 A
x 0D[U'6RQ PȍDW9 *6 -2.5 V, ID = -3.2 A
x Fast switching speed
x Low
x High performance trench technology for extremely low rDS(on)
x SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8);
low profile (1 mm thick)
x Termination is Lead-free and RoHS Compliant
16.3. Pinning
16. FDC642
16.1. General Description
16.2. Features
16.3. Pinning