This P-Channel 1.8V specified MOSFET uses Fairchild’s low voltage PowerTrench
process. It has been optimized for battery power management applications.
17.2. Features
x –5.5 A, –95'62 1 Pȍ#9*6 –4.5 V
x 5'62 1 Pȍ#VGS = –2.5 V
x 5'62 1 Pȍ#9 *6 –1.8 V
x Fast switching speed.
x High performance trench technology for extremely low RDS(ON)(S)
17.3. Pinning
18. Connectors
18.1. Scart (SC1)
17. FDC604P
17.1. General Description
17.2. Features
17.3. Pinning
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