LC-19LE320, LC-22LE320, LC-26LE320, LC-32LE320, LC-37LE320, LC-42LE320 
134  
1.6. U4051 (HY27US08281A-TPIB 128MB TSOP48) 
FEATURES SUMMARY 
HIGH DENSITY NAND FLASH MEMORIES 
- Cost effective solutions for mass storage applications 
NAND INTERFACE 
- x8 or x16 bus width. 
- Multiplexed Address/ Data 
- Pinout compatibility for all densities 
SUPPLY VOLTAGE 
- 3.3V device: VCC = 2.7 to 3.6V : HY27USXX281A 
Memory Cell Array 
= (512+16) Bytes x 32 Pages x 1,024 Blocks 
= (256+8) Words x 32 pages x 1,024 Blocks 
PAGE SIZE 
- x8 device : (512 + 16 spare) Bytes 
: HY27US08281A 
- x16 device: (256 + 8 spare) Words 
: HY27US16281A 
BLOCK SIZE 
- x8 device: (16K + 512 spare) Bytes 
- x16 device: (8K + 256 spare) Words 
PAGE READ / PROGRAM 
- Random access: 10us (max.) 
- Sequential access: 3.3V device: 50ns (min.) 
- Page program time: 200us (typ.) 
COPY BACK PROGRAM MODE 
- Fast page copy without external buffering 
FAST BLOCK ERASE 
- Block erase time: 2ms (Typ.) 
STATUS REGISTER 
ELECTRONIC SIGNATURE 
- Manufacturer Code 
- Device Code 
CHIP ENABLE DON'T CARE OPTION 
- Simple interface with microcontroller 
AUTOMATIC PAGE 0 READ AT POWER-UP OPTION 
- Boot from NAND support 
- Automatic Memory Download 
SERIAL NUMBER OPTION 
HARDWARE DATA PROTECTION 
- Program/Erase locked during Power transitions 
DATA INTEGRITY 
- 100,000 Program/Erase cycles 
- 10 years Data Retention 
PACKAGE 
- HY27US(08/16)281A-T(P) 
: 48-Pin TSOP1 (12 x 20 x 1.2 mm) 
- HY27US(08/16)281A-T (Lead) 
- HY27US(08/16)281A-TP (Lead Free) 
- HY27US(08/16)281A-S(P) 
: 48-Pin USOP1 (12 x 17 x 0.65 mm)