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Copyright 2005© Siemens AG
Page 26 of 53
TD_Repair_L2.5_A70_A75_R1.0.pdf Release 1.0
The RF transceiver modulates the baseband signal to the desired frequency in the 850 MHz,
900 MHz, 1.8 GHz, and 1.9 GHz band using an I/Q modulator. The E-GOLDlite is able to
support quad band applications.
Finally, an RF power module amplifies the RF transmit signal to the required power level.
Using software, the E-GOLDlite controls the gain of the power amplifier by predefined
ramping curves (16 words, 11 bits). The E-GOLDlite communicates with the RF chip set via a
serial data interface.
The E-GOLDlite also includes battery charger support (various sensor connections for
temperature, battery technology, voltage, etc.) and a ringer buffer.
For base band operation, the E-GOLDlite supports:
• High Speed Circuit Switched Data (HSCSD) class 4
• Packet-oriented data (GPRS) class 4 with a coding scheme from 1 to 4. It provides fixed,
dynamic, and extended dynamic modes.
If the E-GOLDlite is only used as a modem, then it supports:
• High Speed Circuit Switched Data (HSCSD) class 10
Note: With a HSCSD class 10, there are a maximum of 4 received time slots and 2
transmitted time slots.
The total maximum number of received and transmitted time slots is 5.
• Packet-oriented data (GPRS) class 10 with a coding scheme from 1 to 4. It provides
fixed, dynamic, and extended dynamic modes.
Note: With a GPRS class 10, there are a maximum of 4 received time slots and 2
transmitted time slots.
The total maximum number of received and transmitted time slots is 5.
The E-GOLDlite can support Class B operation. The mobile phone can be attached to both
GPRS and GSM services, using one service at a time. During a GPRS connection Class B
enables either:
• Making or receiving a voice call
• Sending or receiving an SMS.
During voice calls or SMS, GPRS services are suspended and then resumed automatically
after the call or SMS session has ended.
E-GOLDlite is made with the Infineon C11N process using the High Voltage Threshold (HVT)
and 5 Metal Layer (5LM).
The C11N process is a 0.13 µm technology. It is used for the logic, SRAM, mixed signal, and
mixed voltage Input/Output applications.
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