RC
and MS
have all memorv circuits and
memory control circuits of the Multiskan
through buffers circuits
Dl,
D3
and
D4.
USME will be
done with the
PAL
circuit
(CAL16VX-25)
and demultiplexer
07 (74HCl38).
The data line for memory circuits is lead to the
pcb MUSME though the two way buffer
circuit
D2 (74LS245).
ThedatainVO-operationswillp'dss
thechannel
buffer of the external memory card, because
the buffer is active only in the memory
s are taken from outputs
s
buffer circuit
D19. Dl9
has been driven with cards
IOCE*-
and RD*-
signals to functiononly during VO-operations.
ThethfeeVOdaaahits whish tells theoperation
mode are written direct to the latchcircuit
B5.
See Table
3-10.
To the circuit
05
is
written also
D3
from
which condition depends the address
configuration of the memory.
CASS
which tells
if
the memory cassette
is
missing
is
read through the circuit
D4.
The processor writes three operation modes
-
AM2)
and the drive hit of
the memory configuration
(MCON)
to the
latch circuit D5.
To the
PAL
circuit
is
lead control bits
IOM*,
RD* and
WK*,
five most significant address
bits, the memory configurationsdrive MCON
and as a return coupling bits
CSE4*
and
CSE5*.
GSRAM*
CSEE* Shows
EEPRO
CSE* Shows EEPRO
put to the D7
CSMEG* Shows
128
kB
EEP
circuit
IORD*
110
read operation
to
the
pch MUSME
UO
write operation
to
the
pcb lLlUSME
Table
3-10
Output
signalsfrom
PAL
circuit
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3511352- 100-X 2.0
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