37 ACS2000 AFE 2MVA UM 3BHS355653 ZAB E01 REV. H
Phase module
The AFE consists of three identical phase modules
each housing the series-connected IGBT semicon-
ductors, the phase capacitor, the gate drivers, and
the interface circuit board for communication with
the main control circuit board (AMC circuit board)
of the AFE.
The high voltage IGBT is a power semiconductor
switching device specially developed for medium
voltage drives. The device is based on well-estab-
lished transistor technology and combines high
speed switching capabilities with high blocking
voltage and low conduction losses as known from
GTOs.
Phase capacitors
Phase INT board
Gate drivers
Connectors
IGBT assembly on heat sink
IGBT module, each module
contains two IGBTs