Excel Semiconductor inc.
ES29LV800E
8Mbit(1M x 8/512K x 16)
CMOS 3.0 Volt-only, Boot Sector Flash Memory
GENERAL FEATURES
• Single power supply operation
- 2.7V -3.6V for read, program and erase operations
•Sector Structure
- 16Kbyte x 1, 8Kbyte x 2, 32Kbyte x 1 boot sectors
- 64Kbyte x 15sectors
• Top or Bottom boot block
- ES29LV800ET for Top boot block device
- ES29LV800EB for Bottom boot block device
• Package Options
- 48-pin TSOP
- 48-ball FBGA ( 6 x 8 mm )
- Pb-free packages
- All Pb-free products are RoHS-Compliant
• Low Vcc write inhibit
• Manufactured on 0.18um process technology
• Compatible with JEDEC standards
- Pinout and software compatible with single-power
supply flash standard
DEVICE PERFORMANCE
• Read access time
- 70ns / 90ns / 120ns
• Program and erase time
- Program time : 6us/byte, 8us/word ( typical )
- Sector erase time : 0.7sec/sector ( typical )
• Power consumption (typical values)
- 200nA in standby or automatic sleep mode
- 7mA active read current at 5 MHz
- 15mA active write current during program or erase
• Minimum 100,000 program/erase cycles per sector
• 20 Year data retention at 125
o
C
SOFTWARE FEATURES
• Erase Suspend / Erase Resume
• Data# poll and toggle for Program/erase status
• Unlock Bypass program
• Autoselect mode
• Auto-sleep mode after t
ACC
+ 30ns
HARDWARE FEATURES
• Hardware reset input pin ( RESET#)
- Provides a hardware reset to device
- Any internal device operation is terminated and the
device returns to read mode by the reset
• Ready/Busy# output pin ( RY/BY#)
- Provides a program or erase operational status
about whether it is finished for read or still being
progressed
• Sector protection / unprotection ( RESET# , A9 )
- Hardware method of locking a sector to prevent
any program or erase operation within that sector
- Two methods are provided :
- In-system method by RESET# pin
- A9 high-voltage method for PROM programmers
• Temporary Sector Unprotection ( RESET# )
- Allows temporary unprotection of previously
protected sectors to change data in-system
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