Huawei EM770 - Pin Descriptions; Digital Signal DC Characteristics

HUAWEI EM770 HSPA PC Embedded Module V100R001
Product Specification
Issue 1
(2008-09-15)
Huawei Confidential: This documents is Huawei Proprietary and Confidential(NDA
Required).It may not be duplicated, neither distributed externally without
prior and written permission of Huawei.
Page
22 of 68
3.2 Pin Descriptions
3.2.1 Digital Signal DC Characteristics
Table 3-2 Digital signal DC characteristics
Symbol Description Minimum Maximum Unit Notes
V
IH
High-level input voltage,
CMOS/Schmitt
0.7•V
DD_X
V
DD_X
+
0.3
V 1
V
IL
Low-level input voltage,
CMOS/Schmitt
–0.3 0.3• V
DD_X
V 1
V
OH
High-level output voltage,
CMOS
V
DD_X
- 0.5 V
DD_X
V 1
V
OL
Low-level output voltage,
CMOS
0 0.4 V 1
I
IH
Input high leakage current – 1 µA 1
I
IL
Input low leakage current –1 – µA 1
I
IHPD
Input high leakage current
with pull-down
10 60 µA 1
I
ILPU
Input low leakage current
with pull-up
–60 –10 µA 1
I
OZH
High-level, three-state
leakage current
– 1 µA 1
I
OZL
Low-level, three-state
leakage current
–1 – µA 1
I
OZHPD
High-level, three-state
leakage current with pull-
down
10 60 µA 1
I
OZLPU
Low-level, three-state
leakage current with pull-
up
–60 –10 µA 1
C
IN
Input capacitance – 7 pF 1, 2
Notes:
1. Table 3-2 lists the universal specifications of the signals. Any difference from the
universal specifications is listed in the related chapter or section.
2. The input capacitance value is guaranteed by design and not completely tested.
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