IBM System x3550 M4 12
Table 3. Express models (Part 1: Intel Xeon processor E5-2600 v2 product family) (continued)
MTM** Intel Xeon processors†
(two maximum)
Memory RAID Drive
bays
(std /
max)
Drives GbE I/O
slots
(std /
max)
Optical Power
supply
(std /
max)
Europe
7914-E6G 1x E5-2603 v2 4C 1.8GHz
10MB 1333MHz 80W
1x 4GB
1600MHz§
M1115 4x 2.5"
HS / 8
Open bay 4 2 / 2 Multi-
burner
1x 550W
HS / 2
7914-E7G 1x E5-2620 v2 6C 2.1GHz
15MB 1600MHz 80W
1x 8GB
1600MHz
M5110
512MB (c)
8x 2.5"
HS / 8
Open bay 4 2 / 2 Multi-
burner
1x 550W
HS / 2
7914-E8G 1x E5-2630 v2 6C 2.6GHz
15MB 1600MHz 80W
1x 8GB
1600MHz
M5110
512MB (f)
4x 2.5"
HS / 8
2x 300GB
10K
4 2 / 2 Multi-
burner
2x 550W
HS / 2
Central and Eastern Europe (CEE) and Middle East and Africa (MEA)
7914-E7G 1x E5-2620 v2 6C 2.1GHz
15MB 1600MHz 80W
1x 8GB
1600MHz
M5110
512MB (c)
8x 2.5"
HS / 8
Open bay 4 2 / 2 Multi-
burner
1x 550W
HS / 2
7914-E8G 1x E5-2630 v2 6C 2.6GHz
15MB 1600MHz 80W
1x 8GB
1600MHz
M5110
512MB (f)
4x 2.5"
HS / 8
2x 300GB
10K
4 2 / 2 Multi-
burner
2x 550W
HS / 2
Russia/Commonwealth of Independent States (CIS)
7914-E9G 1x E5-2620 v2 6C 2.1GHz
15MB 1600MHz 80W
1x 8GB
1600MHz
M5110
512MB (f)
8x 2.5"
HS / 8
Open bay 4 2 / 2 Multi-
burner
1x 550W
HS / 2
7914-EFG 1x E5-2630 v2 6C 2.6GHz
15MB 1600MHz 80W
1x 16GB
1866MHz§
M5110
512MB (f)
8x 2.5"
HS / 8
Open bay 4 2 / 2 Multi-
burner
1x 550W
HS / 2
** MTM = Machine Type Model
† Processor detail: Processor quantity and model, number of cores, core speed, L3 cache, memory speed, TDP.
‡ Not available in Russia/CIS.
(c) The ServeRAID M5110 RAID controller in this model includes cache memory with optional battery backup.
(f) The ServeRAID M5110 RAID controller in this model includes flash-backed cache memory.
§ For models E6G, EGU, ELC, EOC, ESC, and ETC, the standard DIMM is rated at 1600 MHz, but operates at up to
1333 MHz to match the processor memory speed. For model EFG, the standard DIMM is rated at 1866 MHz, but
operates at up to 1600 MHz to match the processor memory speed. Actual memory speed maximums depend on
several factors, as described in "Memory options".