LG LG-E960 - Page 294

12. EXPLODED VIEW & REPLACEMENT PART LIST
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Copyright © 2012 LG Electronics. Inc. All right reserved.
Only for training and service purposes
LGE Internal Use Only
Level LocationNo. Description PartNumber Spec Remark
6 U1201 Filter,Separator EAM62310601
RF1156 0.55dB 22dB 29dBm 1.8V Vctl, 3bit control,
3*3*0.85 RF MICRO DEVICES INC
6 Q7001 FET EBK61711801
SSM6J502NU P-CHANNEL MOSFET -20V +-8 -6A
0.028OHM 1W DFN R/TP 6P TOSHIBA
ELECTRONICS KOREA CORPORATION
6 U23001 IC,PMIC EAN62095901
PM8921 2.5 to 4.5V adj 1.3W NSP R/TP 251P -
QUALCOMM INCORPORATED.
6 R7024 Resistor,Chip ERHY0009307
MCR006YZPF4703 470KOHM 1% 1/20W 0603
R/TP - ROHM.
6 U4001 IC,Mobile SDRAM EAN62355401
K3PE0E000A-XGC2 16GBIT LPDDR2 PoP 220ball
1.14VTO1.3V 533MHz 5500ps FGBA TR 220P
16Gb LPDDR2 PoP 220ball (35nm 4Gb x 4)
SAMSUNG ELECTRONIC CO.,LTD
6 C13005
Capacitor
Ceramic,Chip
ECCH0009107
GRM033R71C222K 2.2nF 10% 16V X7R -
55TO+125C 0603 R/TP - KOREA MURATA
ELECTRONICS CO. LTD.
5 EBR071600
PCB Assembly
Main,SMT Bottom
EBR74340502 LGE960.AUSGBK 1.4 Main
6 C1203
Inductor
Multilayer,Chip
ELCH0001426
LL1005-FHL8N2J 8.2NH 5% - 300mA 0.25OHM
4.7GHZ 9 SHIELD NONE 1.0X0.5X0.5MM R/TP
TOKO, INC.
6 U9003 IC,NFC EAN62675301
OTS080CD Secure Elemnet IC DFN 4x4.2x0.55
DFN R/TP 8P Oberthur Technologies
6 L11029
Inductor
Multilayer,Chip
EAP62226201
LQP03TG4N7J02D 4.7NH 5% - 250mA - -
0.72OHM 6GHZ 12 SHIELD - 0.6X0.3X0.3MM R/TP
MURATA MANUFACTURING CO.,LTD.
6 L11005
Inductor
Multilayer,Chip
EAP62108301
LQP03TG8N2J02D 8.2NH 5% - 200mA - - 1.4OHM
4.8GHZ 12 SHIELD - 0.6X0.3X0.3MM R/TP
MURATA MANUFACTURING CO.,LTD.
6 U11008 IC,Power Amplifier EAN62509601
ACPM-7251-TR1 3.2V to 4.35V 0 0 0W 0W 0 4
SMD R/TP 24P MMPA,Quad Band GSM/EDGE
UMTS Dual-Band, 7.5*5, 2mode AVAGO
TECHNOLOGIES INTERNATIONAL SALES PTE.
LIMITED
6 R13009 Resistor,Chip ERHY0009530
MCR006YZPJ561 560OHM 5% 1/20W 0603 R/TP -
ROHM.
6
VA9001
VA9002
Capacitor
Ceramic,Chip
ECZH0000803
C1005C0G1H020CT000F 2pF 0.25PF 50V NP0 -
55TO+125C 1005 R/TP - TDK KOREA
COOPERATION