Atlas DCA User Guide September 2014 – Rev 11
Page 25
Appendix A - Technical Specifications
All values are at 25°C unless otherwise specified.
Parameter Min Typ Max
Note
Peak test current into S/C -5.5mA 5.5mA 1
Peak test voltage across O/C -5.1V 5.1V 1
Transistor gain range (h
) 4 20000 2
Transistor gain accuracy ±3% ±5 h
test voltage 2.0V 3.0V 2
Transistor V
accuracy -2%-20mV +2%+20mV 8
V
for Darlington 0.95V 1.00V 1.80V 3
V
for Darlington (shunted) 0.75V 0.80V 1.80V 4
Acceptable transistor V
1.80V
Base-emitter shunt threshold
BJT collector test current 2.45mA 2.50mA 2.55mA
BJT acceptable leakage 0.7mA 6
MOSFET gate threshold range 0.1V 5.0V 5
MOSFET threshold accuracy -2%-20mV +2%+20mV 5
MOSFET drain test current 2.45mA 2.50mA 2.55mA
MOSFET gate resistance
Depletion drain test current 0.5mA 5.5mA
JFET drain-source test current 0.5mA 5.5mA
SCR/Triac gate test current 4.5mA 7
SCR/Triac load test current 5.0mA
Diode test current 5.0mA
Diode voltage accuracy -2%-20mV +2%+20mV
V
for LED identification 1.50V 4.00V
Short circuit threshold
Battery type MN21 / L1028 / GP23A 12V Alkaline
Battery voltage range 7.50V 12V
Battery warning threshold 8.25V
Dimensions (body) 103 x 70 x 20 mm
1. Between any pair of test clips.
2. Collector current of 2.50mA. Gain accuracy valid for gains less than 2000.
3. Resistance across reverse biased base-emitter > 60kΩ.
4. Resistance across reverse biased base-emitter < 60kΩ.
5. Drain-source current of 2.50mA.
6. Collector-emitter voltage of 5.0V.
7. Thyristor quadrant I, Triac quadrants I and III.
8. BJT with no shunt resistors. Please note, specifications subject to change.
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