Quectel BG96 Series - Page 20

LTE Module Series
BG96 Hardware Design
BG96_Hardware_Design 19 / 78
(U)SIM Interface
Pin Name
Pin No.
I/O
Description
DC
Characteristics
Comment
USIM_
PRESENCE
42
DI
(U)SIM card
insertion
detection
V
IL
min=-0.3V
V
IL
max=0.6V
V
IH
min=1.2V
V
IH
max=2.0V
1.8V power domain.
If unused, keep this pin
open.
USIM_VDD
43
PO
Power supply
for (U)SIM card
For 1.8V (U)SIM:
Vmax=1.9V
Vmin=1.7V
For 3.0V (U)SIM:
Vmax=3.05V
Vmin=2.7V
I
O
max=50mA
Either 1.8V or 3.0V is
supported by the module
automatically.
USIM_RST
44
DO
Reset signal of
(U)SIM card
For 1.8V (U)SIM:
V
OL
max=0.45V
V
OH
min=1.35V
For 3.0V (U)SIM:
V
OL
max=0.45V
V
OH
min=2.55V
USIM_DATA
45
IO
Data signal of
(U)SIM card
For 1.8V (U)SIM:
V
IL
max=0.6V
V
IH
min=1.2V
V
OL
max=0.45V
V
OH
min=1.35V
For 3.0V (U)SIM:
V
IL
max=1.0V
V
IH
min=1.95V
V
OL
max=0.45V
V
OH
min=2.55V
USIM_CLK
46
DO
Clock signal of
(U)SIM card
For 1.8V (U)SIM:
V
OL
max=0.45V
V
OH
min=1.35V
For 3.0V (U)SIM:
V
OL
max=0.45V
V
OH
min=2.55V
USIM_GND
47
Specified
ground for
(U)SIM card