Samsung CS29Z30 - Page 123

Circuit Description
13-4 Samsung Electronics
de
ppotS
6
2
:
2
4
:
90 4
0
/
5
0
/
4
00
2 v
i
d/sm
2
s
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0
2
:
MRON
V0
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C
1
:
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D
Vm
0
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2
HC
1
:
1
CD
=
re
t
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=
N
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: g
n
i
h
t
o
o
mS
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L
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=
te
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ff
O
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0
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0
: 1
HC
V000
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2
HC
V
0
.
0
: 3
HC
V
0 : 4
HC
=
h
t
gn
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dr
o
ceR
=
K
01
: n
i
aM
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o
Z
=
r
e
gg
ir
T
=
OT
UA : e
d
oM
1H
C
E
GDE : ep
y
T
s
n
8
.
0 : yaleD
MUM
I
NI
M
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f
odloH
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e
car
T
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V08.6
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.
6
sm
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41 41/
1
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5
00
2
v
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d
/
sm2s
/
S
k0
0
5
:MR
ON
V
0
2
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C
1
:
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Vm
0
1
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C
1:
1 CD
V
m
06.12
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2
(
V
=r
e
t
l
i
F
=
NO
:
g
nihto
om
S
LLUF : WB
=
t
e
s
f
fO
=
V0.0
: 1H
C
V
0
0
0
0
.
0 : 2HC
V0.0
: 3H
C
V0.0
:
4H
C
=
h
t
g
ne
L dro
c
e
R
=
K
0
01
: n
i
aM
K
0
1 : mooZ
=r
eg
g
ir
T
=
O
T
U
A
: e
doM
1HC EG
D
E : epyT
sn0
.
0 :
y
a
l
e
D
MUM
IN
IM
: f
f
o
d
l
o
H
After correction
e
rutc
iP
no
i
t
r
o
ts
id
< Norm
a
lVertical
Signal>
< Vert ical Wave form
after correct i
i
on >
S
d
e
p
pot
41
/
10
/
500
2
21:5
3:
41
vid
/s
m2
O
N
:
MR/
S
k00
5
s
HCV02=1
D C1:001
H
C
Vm01=2
D C:11
V(
2
tli
F=r
e
=
o
t gnih:NO
F
UL L
f
f
O==
t
e
s
HC1: V0.0
H
C2: V0000.0
HC3:
V0
.0
HC4: V0.0
=
htgn
e
L droceR
=
niaM: K00
1
moo
Z
:
K
01
rT=reggi=
edo
M
:
U
AOT
: epy
T
EG
D
E C 1
H
yale
D: sn0.
0
fodloH: fM INIMUM
e
r
utciP
noitrotsiD
ⓑ Comparison before and after of N/S signal correction