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ST TIP120 - User Manual

ST TIP120
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November 2008 Rev 4 1/13
13
TIP120, TIP121, TIP122
TIP125, TIP126, TIP127
Complementary power Darlington transistors
Features
Low collector-emitter saturation voltage
Complementary NPN - PNP transistors
Applications
General purpose linear and switching
Description
The devices are manufactured in planar
technology with “base island” layout and
monolithic Darlington configuration. The resulting
transistors show exceptional high gain
performance coupled with very low saturation
voltage.
Figure 1. Internal schematic diagrams
TO-220
1
2
3
NPN: R
1
= 7 K
PNP: R
1
= 16 K
R
2
= 60
R
2
= 70
Table 1. Device summary
Order codes Marking Package Packaging
TIP120 TIP120
TO-220 Tube
TIP121 TIP121
TIP122 TIP122
TIP125 TIP125
TIP126 TIP126
TIP127 TIP127
www.st.com
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Summary

Electrical Ratings

Electrical Characteristics

Electrical Characteristics (Curves)

Presents electrical performance through graphical representations.

Test Circuits

Package Mechanical Data

Revision History

Summary

Electrical Ratings

Electrical Characteristics

Electrical Characteristics (Curves)

Presents electrical performance through graphical representations.

Test Circuits

Package Mechanical Data

Revision History

Overview

The TIP120, TIP121, TIP122, TIP125, TIP126, and TIP127 are a series of complementary power Darlington transistors designed for general-purpose linear and switching applications. These devices are manufactured using a planar technology with a "base island" layout and a monolithic Darlington configuration, which results in transistors exhibiting exceptional high gain performance and very low saturation voltage.

Function Description

These devices operate as complementary NPN and PNP Darlington transistors, meaning they come in pairs with opposite polarities (NPN and PNP) that can be used together in various circuit designs. The Darlington configuration essentially combines two bipolar junction transistors (BJTs) into a single compound transistor, providing a much higher current gain than a single transistor. This high gain is particularly beneficial in applications where a small input current needs to control a much larger output current, such as in power amplification or switching circuits.

The "power" aspect indicates their capability to handle significant amounts of power, making them suitable for driving motors, relays, lamps, and other high-current loads. Their design emphasizes a low collector-emitter saturation voltage, which is a critical parameter for power applications. A low saturation voltage means that when the transistor is fully turned on (saturated), the voltage drop across it is minimal. This minimizes power dissipation within the transistor itself, leading to higher efficiency and less heat generation, which is crucial for reliable operation in power circuits.

The complementary nature of these transistors (NPN and PNP) allows for the construction of push-pull amplifier stages or complementary symmetry output stages, which are common in audio amplifiers and other linear power applications. In such configurations, the NPN and PNP transistors work in tandem to amplify both the positive and negative halves of an AC signal, providing efficient and low-distortion output. For switching applications, the high current gain enables these transistors to be easily driven into saturation or cutoff with relatively small control signals, making them effective as electronic switches for controlling power to various loads.

Usage Features

The TIP120, TIP121, TIP122, TIP125, TIP126, and TIP127 series are designed for ease of integration into a wide range of electronic circuits. Their TO-220 package is a standard industry format, known for its robust construction and suitability for through-hole mounting. This package typically includes a metal tab that can be easily attached to a heatsink, facilitating efficient thermal management, which is essential for power transistors to dissipate heat generated during operation.

The "base island" layout and monolithic Darlington configuration simplify circuit design by integrating the two transistors and their associated biasing resistors into a single package. This reduces component count, board space, and assembly complexity compared to building a Darlington pair from discrete components. The inherent high current gain (hFE) of the Darlington configuration means that these transistors can be driven by microcontrollers or other low-power logic circuits without the need for additional pre-driver stages, further simplifying the overall system design.

These devices are well-suited for both linear operation, where they amplify signals, and switching operation, where they act as on/off controls. In linear applications, their high gain and low saturation voltage contribute to efficient power delivery and signal fidelity. In switching applications, their ability to quickly transition between on and off states, coupled with low power dissipation in the on-state, makes them effective for controlling various loads. The complementary pairs offer flexibility in designing circuits that require both sourcing and sinking current capabilities, such as H-bridges for motor control or class B/AB audio amplifiers.

The series offers different voltage ratings (e.g., TIP120/125 with 60V, TIP121/126 with 80V, and TIP122/127 with 100V), allowing designers to select the appropriate device based on the required breakdown voltage for their specific application, ensuring robust and reliable operation across various voltage domains. The specified maximum collector current and peak current ratings provide clear guidelines for handling different load requirements.

Maintenance Features

As semiconductor devices, the TIP120, TIP121, TIP122, TIP125, TIP126, and TIP127 transistors are generally considered maintenance-free components once properly installed and operated within their specified limits. Their robust construction and monolithic integration contribute to long-term reliability.

The primary consideration for maintaining the performance and longevity of these power transistors is effective thermal management. Due to their power handling capabilities, they generate heat, and excessive temperature can lead to degraded performance or even device failure. The TO-220 package, with its metal tab, is designed to be easily mounted to a heatsink. Proper heatsink selection and application, including the use of thermal paste or pads to ensure efficient heat transfer, are crucial. Regular inspection of the heatsink and cooling system (if active cooling is used) to ensure they are free from dust or obstructions can help maintain optimal operating temperatures.

Operating the transistors within their absolute maximum ratings, as specified in the datasheet, is essential for preventing premature failure. This includes respecting maximum collector-emitter voltage, collector current, base current, and total power dissipation. Over-voltage or over-current conditions can permanently damage the internal structure of the transistor.

The devices are designed to be stable under normal operating conditions, and their internal Darlington configuration provides inherent protection against some types of transient conditions. However, in applications with inductive loads or potential for voltage spikes, external protection circuitry such as snubber networks or flyback diodes may be necessary to protect the transistors from damage, thereby extending their operational life.

Given their solid-state nature, there are no moving parts or consumable elements within the transistors themselves that require periodic replacement or adjustment. The reliability of the devices is largely dependent on the quality of the surrounding circuit design and adherence to proper operating conditions. In the event of a failure, the entire component would typically be replaced rather than repaired. The use of lead-free and ECOPACK® compliant packages indicates a commitment to environmental standards, which also implies robust manufacturing processes that contribute to the overall reliability and reduced environmental impact throughout the device's lifecycle.

ST TIP120 Specifications

General IconGeneral
Transistor TypeNPN Darlington
Collector-Emitter Voltage (VCEO)60 V
Collector Current (IC)5 A
DC Current Gain (hFE)1000
PackageTO-220
Power Dissipation (PD)65 W
Operating Temperature-65°C to +150°C

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