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Table 15: DC and operating characteristic
9. 16M-BIT [16M x 1] CMOS SERIAL FLASH EEPROM
MX25L1602 Mstar SPI Flash
a) Key Features
■ HIGH DENSITY NAND FLASH MEMORIES
GENERAL
• 16,777,216 x 1 bit structure
• 256 Equal Sectors with 8K-byte each
- Any sector can be erased
• 4096 Equal Segments with 512-byte each
- Provides sequential output within any segment
• Single Power Supply Operation
- 3.0 to 3.6 volt for read, erase, and program operations
• Latch-up protected to 100mA from -1V to Vcc +1V
• Low Vcc write inhibit is equal to or less than 2.5V
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