Furuno FS-1570 - Page 218

7.3 PA Bias
7-16
Specification of PA transistors
Specifications of PA transistors are tabulated below.
Table 7.3.1 Specification of SD1405
** FS-2570 - DRV board: PA Tr **
Symbol Parameter Value Unit
V
CBO
Collector-Base Voltage 36 V
V
CEO
Collector-Emitter Voltage 18 V
V
BEO
Emitter-Base Voltage 4.0 V
Ic Device Current 20 A
P
DISS
Power Dissipation 270 W
T
J
Junction Temperature +200 deg
T
STG
Storage Temperature -65 to +150 deg
Table 7.3.2 Specification of SD1407
** FS-2570 and FS-1570 - PA board: PA Tr **
Symbol Parameter Value Unit
V
CBO
Collector-Base Voltage 65 V
V
CEO
Collector-Emitter Voltage 36 V
V
BEO
Emitter-Base Voltage 4.0 V
Ic Device Current 20 A
P
DISS
Power Dissipation 270 W
T
J
Junction Temperature +200 deg
T
STG
Storage Temperature -65 to +150 deg
Table 7.3.3 Specification of 2SC3133
** FS-2570 - DRV board: DRV Tr, FS-1570 - PA board: DRV Tr **
Symbol Parameter Value Unit
V
CBO
Collector-Base Voltage 60 V
V
CEO
Collector-Emitter Voltage 25 V
V
BEO
Emitter-Base Voltage 5 V
Ic Device Current 6 A
P
C
Power Dissipation 20 W
T
J
Junction Temperature +150 deg
T
STG
Storage Temperature -55 to +150 deg